NL296170A - - Google Patents

Info

Publication number
NL296170A
NL296170A NL296170DA NL296170A NL 296170 A NL296170 A NL 296170A NL 296170D A NL296170D A NL 296170DA NL 296170 A NL296170 A NL 296170A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL296170A publication Critical patent/NL296170A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/7302Bipolar junction transistors structurally associated with other devices
    • H01L29/7304Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804Emitter regions of bipolar transistors
    • H01L29/0813Non-interconnected multi-emitter structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
NL296170D 1962-10-04 NL296170A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEJ22459A DE1264615B (de) 1962-10-04 1962-10-04 Emitteranschluss eines Leistungstransistors

Publications (1)

Publication Number Publication Date
NL296170A true NL296170A (de)

Family

ID=7200967

Family Applications (1)

Application Number Title Priority Date Filing Date
NL296170D NL296170A (de) 1962-10-04

Country Status (4)

Country Link
DE (1) DE1264615B (de)
FR (1) FR1358189A (de)
GB (1) GB1044469A (de)
NL (1) NL296170A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504239A (en) * 1964-01-31 1970-03-31 Rca Corp Transistor with distributed resistor between emitter lead and emitter region
US3368123A (en) * 1965-02-04 1968-02-06 Gen Motors Corp Semiconductor device having uniform current density on emitter periphery
US3506886A (en) * 1965-03-08 1970-04-14 Itt High power transistor assembly
DE1514266C3 (de) * 1965-08-12 1984-05-03 N.V. Philips' Gloeilampenfabrieken, Eindhoven Halbleiterbauelement und Schaltung dafür
JPS5025306B1 (de) * 1968-04-04 1975-08-22
NL164703C (nl) * 1968-06-21 1981-01-15 Philips Nv Halfgeleiderinrichting, voorzien van een contact met ten minste twee gedeelten en een voor deze gedeelten gemeenschappelijk gedeelte, waarbij in elk der ver- bindingswegen tussen de gedeelten en het gemeenschappe- lijke gedeelte een serieweerstand is opgenomen.
NL6813997A (de) * 1968-09-30 1970-04-01
NL7002117A (de) * 1970-02-14 1971-08-17
NL165888C (nl) * 1970-10-10 1981-05-15 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam bevattende een collectorzone, een basiszone en een emitterzone waarbij de emitterzone ten minste twee strookvormige onderling evenwijdige emittergebieden bevat, die uit afwisselend smallere en bredere delen bestaan.
JPS5641186B2 (de) * 1972-03-03 1981-09-26
DE2251727A1 (de) * 1972-10-21 1974-04-25 Licentia Gmbh Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps
JPS57117276A (en) * 1981-01-14 1982-07-21 Hitachi Ltd Semiconductor device
DE3346518C1 (de) * 1983-12-22 1989-01-12 Texas Instruments Deutschland Gmbh, 8050 Freising Feldeffekttransistor mit isolierter Gate-Elektrode
JPS62229975A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 電力用トランジスタ
JP3942984B2 (ja) * 2002-08-06 2007-07-11 株式会社ナノテコ バイポーラトランジスタ、マルチフィンガーバイポーラトランジスタ、バイポーラトランジスタ製造用エピタキシャル基板、及びバイポーラトランジスタの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1786107U (de) * 1956-09-25 1959-04-02 Siemens Ag Leistungstransistor.
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit

Also Published As

Publication number Publication date
DE1264615B (de) 1968-03-28
GB1044469A (en) 1966-09-28
FR1358189A (fr) 1964-04-10

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