CH505471A - Feldeffekttransistor - Google Patents

Feldeffekttransistor

Info

Publication number
CH505471A
CH505471A CH501270A CH501270A CH505471A CH 505471 A CH505471 A CH 505471A CH 501270 A CH501270 A CH 501270A CH 501270 A CH501270 A CH 501270A CH 505471 A CH505471 A CH 505471A
Authority
CH
Switzerland
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Application number
CH501270A
Other languages
English (en)
Inventor
Louis Janning John
Original Assignee
Ncr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ncr Co filed Critical Ncr Co
Publication of CH505471A publication Critical patent/CH505471A/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CH501270A 1969-04-04 1970-04-02 Feldeffekttransistor CH505471A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81363369A 1969-04-04 1969-04-04

Publications (1)

Publication Number Publication Date
CH505471A true CH505471A (de) 1971-03-31

Family

ID=25212961

Family Applications (1)

Application Number Title Priority Date Filing Date
CH501270A CH505471A (de) 1969-04-04 1970-04-02 Feldeffekttransistor

Country Status (6)

Country Link
US (1) US3593071A (de)
BE (1) BE748428A (de)
CH (1) CH505471A (de)
DE (1) DE2015748A1 (de)
FR (1) FR2038238B1 (de)
GB (1) GB1247819A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4926228A (en) * 1981-03-30 1990-05-15 Secretary Of State For Defence (G.B.) Photoconductive detector arranged for bias field concentration at the output bias contact
JPH0620133B2 (ja) * 1987-05-28 1994-03-16 宮城工業高等専門学校長 Ｍｏｓｆｅｔ装置
EP0416198A1 (de) * 1989-08-30 1991-03-13 International Business Machines Corporation Elektronenwellenablenkung in modulationsdotierten und anderen dotierten Halbleiterstrukturen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2987659A (en) * 1955-02-15 1961-06-06 Teszner Stanislas Unipolar "field effect" transistor
FR1163274A (fr) * 1956-12-12 1958-09-24 Dispositif à semi-conducteurs pour le redressement et la limitation de forts courants électriques
BE641360A (de) * 1962-12-17
US3290569A (en) * 1964-02-14 1966-12-06 Rca Corp Tellurium thin film field effect solid state electrical devices

Also Published As

Publication number Publication date
DE2015748A1 (de) 1971-10-21
GB1247819A (en) 1971-09-29
FR2038238B1 (de) 1974-12-27
BE748428A (fr) 1970-09-16
US3593071A (en) 1971-07-13
FR2038238A1 (de) 1971-01-08

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Legal Events

Date Code Title Description
PL Patent ceased