BE748428A - Dispositif semi-conducteur a effet de champ - Google Patents

Dispositif semi-conducteur a effet de champ

Info

Publication number
BE748428A
BE748428A BE748428DA BE748428A BE 748428 A BE748428 A BE 748428A BE 748428D A BE748428D A BE 748428DA BE 748428 A BE748428 A BE 748428A
Authority
BE
Belgium
Prior art keywords
field
semiconductor device
effect semiconductor
effect
semiconductor
Prior art date
Application number
Other languages
English (en)
Inventor
J L Janning
Original Assignee
Ncr Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ncr Co filed Critical Ncr Co
Publication of BE748428A publication Critical patent/BE748428A/fr

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
    • H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
BE748428D 1969-04-04 1970-04-03 Dispositif semi-conducteur a effet de champ BE748428A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81363369A 1969-04-04 1969-04-04

Publications (1)

Publication Number Publication Date
BE748428A true BE748428A (fr) 1970-09-16

Family

ID=25212961

Family Applications (1)

Application Number Title Priority Date Filing Date
BE748428D BE748428A (fr) 1969-04-04 1970-04-03 Dispositif semi-conducteur a effet de champ

Country Status (6)

Country Link
US (1) US3593071A (fr)
BE (1) BE748428A (fr)
CH (1) CH505471A (fr)
DE (1) DE2015748A1 (fr)
FR (1) FR2038238B1 (fr)
GB (1) GB1247819A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4926228A (en) * 1981-03-30 1990-05-15 Secretary Of State For Defence (G.B.) Photoconductive detector arranged for bias field concentration at the output bias contact
JPH0620133B2 (ja) * 1987-05-28 1994-03-16 宮城工業高等専門学校長 Ｍｏｓｆｅｔ装置
EP0416198A1 (fr) * 1989-08-30 1991-03-13 International Business Machines Corporation Déflexion d'onde électronique dans des structures semi-conductrices à modulation de dopage et autres

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2987659A (en) * 1955-02-15 1961-06-06 Teszner Stanislas Unipolar "field effect" transistor
FR1163274A (fr) * 1956-12-12 1958-09-24 Dispositif à semi-conducteurs pour le redressement et la limitation de forts courants électriques
NL301884A (fr) * 1962-12-17
US3290569A (en) * 1964-02-14 1966-12-06 Rca Corp Tellurium thin film field effect solid state electrical devices

Also Published As

Publication number Publication date
US3593071A (en) 1971-07-13
GB1247819A (en) 1971-09-29
FR2038238B1 (fr) 1974-12-27
DE2015748A1 (de) 1971-10-21
CH505471A (de) 1971-03-31
FR2038238A1 (fr) 1971-01-08

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