CH511512A - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
CH511512A
CH511512A CH983470A CH983470A CH511512A CH 511512 A CH511512 A CH 511512A CH 983470 A CH983470 A CH 983470A CH 983470 A CH983470 A CH 983470A CH 511512 A CH511512 A CH 511512A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
CH983470A
Other languages
English (en)
Inventor
Joannes Tulp Theodorus
Arnoldus Appels Johannes
Kooi Else
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH511512A publication Critical patent/CH511512A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/051—Manufacture or treatment of isolation region based on field-effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/50—Isolation regions based on field-effect
CH983470A 1969-07-01 1970-06-29 Halbleitervorrichtung CH511512A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6910027.A NL161304C (nl) 1969-07-01 1969-07-01 Halfgeleiderinrichting met een laagvormig gebied en een door een isolerendelaag van het laagvormig gebied gescheiden elektrodelaag, zodat bij het aanleggen van een geschikte potentiaal op de elektrodelaag in het laagvormig gebied een uitputtingszone wordt gevormd.

Publications (1)

Publication Number Publication Date
CH511512A true CH511512A (de) 1971-08-15

Family

ID=19807349

Family Applications (1)

Application Number Title Priority Date Filing Date
CH983470A CH511512A (de) 1969-07-01 1970-06-29 Halbleitervorrichtung

Country Status (8)

Country Link
US (1) US3678347A (de)
JP (1) JPS4944793B1 (de)
CH (1) CH511512A (de)
DE (1) DE2030917C3 (de)
FR (1) FR2050427B1 (de)
GB (1) GB1320778A (de)
NL (1) NL161304C (de)
SE (1) SE367513B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA948331A (en) * 1971-03-16 1974-05-28 Michael F. Tompsett Charge transfer imaging devices
JPS5214944B1 (de) * 1971-06-04 1977-04-25
JPS573225B2 (de) * 1974-08-19 1982-01-20
US4035829A (en) * 1975-01-13 1977-07-12 Rca Corporation Semiconductor device and method of electrically isolating circuit components thereon
US4611220A (en) * 1983-11-16 1986-09-09 General Motors Corporation Junction-MOS power field effect transistor
US4786952A (en) * 1986-07-24 1988-11-22 General Motors Corporation High voltage depletion mode MOS power field effect transistor
US4769685A (en) * 1986-10-27 1988-09-06 General Motors Corporation Recessed-gate junction-MOS field effect transistor
US7714352B2 (en) * 2006-02-09 2010-05-11 Nissan Motor Co., Ltd. Hetero junction semiconductor device
US10049884B2 (en) * 2013-02-07 2018-08-14 John Wood Anodic etching of substrates
US11101372B2 (en) 2013-02-07 2021-08-24 John Wood Double-sided vertical power transistor structure
US10374070B2 (en) 2013-02-07 2019-08-06 John Wood Bidirectional bipolar-mode JFET driver circuitry
US10700216B2 (en) 2013-02-07 2020-06-30 John Wood Bidirectional bipolar-mode JFET driver circuitry
US10084054B2 (en) 2016-06-03 2018-09-25 Alfred I. Grayzel Field effect transistor which can be biased to achieve a uniform depletion region

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1789084B2 (de) * 1961-08-17 1973-05-30 Rca Corp., New York, N.Y. (V.St.A.) Duennschicht-verknuepfungsglied und verfahren zu seiner herstellung
US3576392A (en) * 1968-06-26 1971-04-27 Rca Corp Semiconductor vidicon target having electronically alterable light response characteristics
US3535600A (en) * 1968-10-10 1970-10-20 Gen Electric Mos varactor diode
US3560815A (en) * 1968-10-10 1971-02-02 Gen Electric Voltage-variable capacitor with extendible pn junction region
US3566219A (en) * 1969-01-16 1971-02-23 Signetics Corp Pinched resistor semiconductor structure

Also Published As

Publication number Publication date
DE2030917B2 (de) 1980-11-20
SE367513B (de) 1974-05-27
JPS4944793B1 (de) 1974-11-30
US3678347A (en) 1972-07-18
DE2030917C3 (de) 1981-07-09
NL161304B (nl) 1979-08-15
FR2050427A1 (de) 1971-04-02
GB1320778A (en) 1973-06-20
FR2050427B1 (de) 1976-03-19
NL6910027A (de) 1971-01-05
DE2030917A1 (de) 1971-01-14
NL161304C (nl) 1980-01-15

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Legal Events

Date Code Title Description
PL Patent ceased