CH507591A - Halbleitervorrichtung - Google Patents
HalbleitervorrichtungInfo
- Publication number
- CH507591A CH507591A CH28070A CH28070A CH507591A CH 507591 A CH507591 A CH 507591A CH 28070 A CH28070 A CH 28070A CH 28070 A CH28070 A CH 28070A CH 507591 A CH507591 A CH 507591A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
- H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79031869A | 1969-01-10 | 1969-01-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH507591A true CH507591A (de) | 1971-05-15 |
Family
ID=25150311
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH28070A CH507591A (de) | 1969-01-10 | 1970-01-09 | Halbleitervorrichtung |
Country Status (8)
Country | Link |
---|---|
US (1) | US3623925A (de) |
BE (1) | BE744140A (de) |
BR (1) | BR6915753D0 (de) |
CH (1) | CH507591A (de) |
DE (1) | DE1965340A1 (de) |
ES (1) | ES375322A1 (de) |
FR (1) | FR2028085A7 (de) |
NL (1) | NL7000279A (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2124142B1 (de) * | 1971-02-09 | 1973-11-30 | Simplex Appareils | |
US3969632A (en) * | 1971-07-06 | 1976-07-13 | Thomson-Csf | Logic circuits-employing junction-type field-effect transistors |
JPS555295B2 (de) * | 1971-09-10 | 1980-02-05 | ||
US3907595A (en) * | 1971-12-03 | 1975-09-23 | Communications Satellite Corp | Solar cells with incorporate metal leyer |
US3855612A (en) * | 1972-01-03 | 1974-12-17 | Signetics Corp | Schottky barrier diode semiconductor structure and method |
DE2262297C2 (de) * | 1972-12-20 | 1985-11-28 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau |
US3938243A (en) * | 1973-02-20 | 1976-02-17 | Signetics Corporation | Schottky barrier diode semiconductor structure and method |
GB1434961A (en) * | 1973-11-08 | 1976-05-12 | Plessey Co Ltd | Integrated circuit arrangements |
US3962590A (en) * | 1974-08-14 | 1976-06-08 | Bell Telephone Laboratories, Incorporated | TTL compatible logic gate circuit |
US3996656A (en) * | 1974-08-28 | 1976-12-14 | Harris Corporation | Normally off Schottky barrier field effect transistor and method of fabrication |
US3978393A (en) * | 1975-04-21 | 1976-08-31 | Burroughs Corporation | High efficiency switching regulator |
US4035670A (en) * | 1975-12-24 | 1977-07-12 | California Linear Circuits, Inc. | Transistor stored charge control using a recombination layer diode |
US3987216A (en) * | 1975-12-31 | 1976-10-19 | International Business Machines Corporation | Method of forming schottky barrier junctions having improved barrier height |
DE2656420A1 (de) * | 1976-12-13 | 1978-06-15 | Siemens Ag | Transistor mit innerer gegenkopplung |
US4201998A (en) * | 1977-02-18 | 1980-05-06 | Bell Telephone Laboratories, Incorporated | Devices with Schottky metal contacts filling a depression in a semi-conductor body |
US4199860A (en) * | 1977-11-11 | 1980-04-29 | Rca Corporation | Method of integrating semiconductor components |
US4282538A (en) * | 1977-11-11 | 1981-08-04 | Rca Corporation | Method of integrating semiconductor components |
JPS55125663A (en) * | 1979-03-22 | 1980-09-27 | Hitachi Ltd | Semiconductor integrated circuit |
US4412376A (en) * | 1979-03-30 | 1983-11-01 | Ibm Corporation | Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation |
GB2064892B (en) * | 1979-12-06 | 1983-06-22 | Marconi Instruments Ltd | Frequency multipliers |
US4982244A (en) * | 1982-12-20 | 1991-01-01 | National Semiconductor Corporation | Buried Schottky clamped transistor |
US6833556B2 (en) | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
US7084423B2 (en) | 2002-08-12 | 2006-08-01 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
US20120319768A1 (en) * | 2010-12-20 | 2012-12-20 | Diodes Zetex Semiconductors Limited | Complementary Darlington Emitter Follower with Improved Switching Speed and Improved Cross-over Control and Increased Output Voltage |
CN107578994B (zh) | 2011-11-23 | 2020-10-30 | 阿科恩科技公司 | 通过插入界面原子单层改进与iv族半导体的金属接触 |
US9620611B1 (en) | 2016-06-17 | 2017-04-11 | Acorn Technology, Inc. | MIS contact structure with metal oxide conductor |
WO2018094205A1 (en) | 2016-11-18 | 2018-05-24 | Acorn Technologies, Inc. | Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height |
KR102226206B1 (ko) * | 2020-02-06 | 2021-03-11 | 포항공과대학교 산학협력단 | 이중 pn 접합을 포함하는 메모리 소자 및 그 구동방법 |
-
1969
- 1969-01-10 US US790318A patent/US3623925A/en not_active Expired - Lifetime
- 1969-12-29 DE DE19691965340 patent/DE1965340A1/de active Pending
- 1969-12-31 BR BR215753/69A patent/BR6915753D0/pt unknown
-
1970
- 1970-01-06 FR FR7000208A patent/FR2028085A7/fr not_active Expired
- 1970-01-07 BE BE744140D patent/BE744140A/xx unknown
- 1970-01-09 CH CH28070A patent/CH507591A/de not_active IP Right Cessation
- 1970-01-09 NL NL7000279A patent/NL7000279A/xx unknown
- 1970-01-10 ES ES375322A patent/ES375322A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL7000279A (de) | 1970-07-14 |
DE1965340A1 (de) | 1970-07-23 |
BE744140A (fr) | 1970-06-15 |
US3623925A (en) | 1971-11-30 |
FR2028085A7 (de) | 1970-10-09 |
ES375322A1 (es) | 1972-04-16 |
BR6915753D0 (pt) | 1973-01-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |