CH504108A - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
CH504108A
CH504108A CH428270A CH428270A CH504108A CH 504108 A CH504108 A CH 504108A CH 428270 A CH428270 A CH 428270A CH 428270 A CH428270 A CH 428270A CH 504108 A CH504108 A CH 504108A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
CH428270A
Other languages
English (en)
Inventor
Albertus Bosselaar Cornelis
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH504108A publication Critical patent/CH504108A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
CH428270A 1969-03-25 1970-03-20 Halbleiteranordnung CH504108A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL6904619A NL6904619A (de) 1969-03-25 1969-03-25
US19960071A 1971-11-17 1971-11-17

Publications (1)

Publication Number Publication Date
CH504108A true CH504108A (de) 1971-02-28

Family

ID=26644416

Family Applications (1)

Application Number Title Priority Date Filing Date
CH428270A CH504108A (de) 1969-03-25 1970-03-20 Halbleiteranordnung

Country Status (6)

Country Link
US (1) US3763406A (de)
BE (1) BE747894A (de)
CH (1) CH504108A (de)
FR (1) FR2037252B1 (de)
GB (1) GB1299804A (de)
NL (1) NL6904619A (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3858235A (en) * 1971-07-05 1974-12-31 Siemens Ag Planar four-layer-diode having a lateral arrangement of one of two partial transistors
US4009483A (en) * 1974-04-04 1977-02-22 Motorola, Inc. Implementation of surface sensitive semiconductor devices
JPS573225B2 (de) * 1974-08-19 1982-01-20
GB1499845A (en) * 1975-03-26 1978-02-01 Mullard Ltd Thyristors
US4063274A (en) * 1976-12-10 1977-12-13 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors
JPS57160159A (en) * 1981-03-28 1982-10-02 Toshiba Corp High breakdown voltage planar type semiconductor device
DE3142616A1 (de) * 1981-10-28 1983-05-05 Robert Bosch Gmbh, 7000 Stuttgart "planare transistorstruktur"
DE3276091D1 (en) * 1981-12-24 1987-05-21 Nippon Denso Co Semiconductor device including overvoltage protection diode
DE3220250A1 (de) * 1982-05-28 1983-12-01 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit planarstruktur
GB2134705B (en) * 1983-01-28 1985-12-24 Philips Electronic Associated Semiconductor devices
DE58907758D1 (de) * 1988-09-20 1994-07-07 Siemens Ag Planarer pn-Übergang hoher Spannungsfestigkeit.
DE59009155D1 (de) * 1990-11-12 1995-06-29 Siemens Ag Halbleiterbauelement für hohe Sperrspannung.
JP2812093B2 (ja) * 1992-09-17 1998-10-15 株式会社日立製作所 プレーナ接合を有する半導体装置
EP0661753A1 (de) * 1994-01-04 1995-07-05 Motorola, Inc. Halbleiterstruktur mit feldsbegrenzender Zone und Verfahren zur Herstellung
JP3111827B2 (ja) * 1994-09-20 2000-11-27 株式会社日立製作所 半導体装置及びそれを使った電力変換装置
US8110868B2 (en) 2005-07-27 2012-02-07 Infineon Technologies Austria Ag Power semiconductor component with a low on-state resistance
US8461648B2 (en) 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
JP2008277353A (ja) * 2007-04-25 2008-11-13 Matsushita Electric Ind Co Ltd 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA941074A (en) * 1964-04-16 1974-01-29 Northern Electric Company Limited Semiconductor devices with field electrodes
FR1467614A (fr) * 1965-02-09 1967-01-27 Siemens Ag Dispositif à semi-conducteurs
FR1475201A (fr) * 1965-04-07 1967-03-31 Itt Dispositif plan à semi-conducteurs
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices

Also Published As

Publication number Publication date
FR2037252B1 (de) 1974-03-01
DE2012978B2 (de) 1976-05-13
NL6904619A (de) 1970-09-29
US3763406A (en) 1973-10-02
FR2037252A1 (de) 1970-12-31
GB1299804A (en) 1972-12-13
DE2012978A1 (de) 1970-10-08
BE747894A (fr) 1970-09-24

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Legal Events

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