BE777996A - Dispositif a memoire effacable a effet de champ - Google Patents
Dispositif a memoire effacable a effet de champInfo
- Publication number
- BE777996A BE777996A BE777996A BE777996A BE777996A BE 777996 A BE777996 A BE 777996A BE 777996 A BE777996 A BE 777996A BE 777996 A BE777996 A BE 777996A BE 777996 A BE777996 A BE 777996A
- Authority
- BE
- Belgium
- Prior art keywords
- effect
- field
- memory device
- erasable memory
- erasable
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10664371A | 1971-01-15 | 1971-01-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE777996A true BE777996A (fr) | 1972-05-02 |
Family
ID=22312502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE777996A BE777996A (fr) | 1971-01-15 | 1972-01-13 | Dispositif a memoire effacable a effet de champ |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5146382B1 (fr) |
| BE (1) | BE777996A (fr) |
| CA (1) | CA946524A (fr) |
| DE (1) | DE2201028C3 (fr) |
| FR (1) | FR2121824B1 (fr) |
| GB (1) | GB1383981A (fr) |
| IT (1) | IT962050B (fr) |
| NL (1) | NL7200562A (fr) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3797000A (en) * | 1972-12-29 | 1974-03-12 | Ibm | Non-volatile semiconductor storage device utilizing avalanche injection and extraction of stored information |
| US3836992A (en) * | 1973-03-16 | 1974-09-17 | Ibm | Electrically erasable floating gate fet memory cell |
| JPS5613029B2 (fr) * | 1973-09-21 | 1981-03-25 | ||
| DE2525062C2 (de) | 1975-06-05 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Matrixanordnung aus n-Kanal-Speicher-FET |
| DE2513207C2 (de) * | 1974-09-20 | 1982-07-01 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2638730C2 (de) * | 1974-09-20 | 1982-10-28 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET, Verfahren zum Entladen des Speichergate des n-Kanal-Speicher-FET und Verwendung des n-Kanal-Speicher-FET |
| DE2812049C2 (de) * | 1974-09-20 | 1982-05-27 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2445079C3 (de) * | 1974-09-20 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | Speicher-Feldeffekttransistor |
| DE2505816C3 (de) * | 1974-09-20 | 1982-04-22 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix |
| DE2643987C2 (de) * | 1974-09-20 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| DE2560220C2 (de) * | 1975-03-25 | 1982-11-25 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
| JPS5554415A (en) * | 1978-10-16 | 1980-04-21 | Nippon Gakki Seizo Kk | Method and device for space set averaging for reverberation waveform |
| DE2845328C2 (de) * | 1978-10-18 | 1986-04-30 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Speichertransistor |
| JPS6162824A (ja) * | 1985-06-22 | 1986-03-31 | Nippon Gakki Seizo Kk | 残響デ−タ圧縮取込方法およびその装置 |
| WO2001024268A1 (fr) * | 1999-09-24 | 2001-04-05 | Intel Corporation | Dispositif a memoire remanente avec grille flottante hautement fonctionnelle et son procede de fabrication |
| US6518618B1 (en) | 1999-12-03 | 2003-02-11 | Intel Corporation | Integrated memory cell and method of fabrication |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
| CA813537A (en) * | 1967-10-17 | 1969-05-20 | Joseph H. Scott, Jr. | Semiconductor memory device |
-
1972
- 1972-01-11 DE DE19722201028 patent/DE2201028C3/de not_active Expired
- 1972-01-13 FR FR7201101A patent/FR2121824B1/fr not_active Expired
- 1972-01-13 BE BE777996A patent/BE777996A/fr unknown
- 1972-01-14 GB GB196072A patent/GB1383981A/en not_active Expired
- 1972-01-14 NL NL7200562A patent/NL7200562A/xx not_active Application Discontinuation
- 1972-01-14 IT IT1937872A patent/IT962050B/it active
- 1972-01-14 CA CA132,413A patent/CA946524A/en not_active Expired
- 1972-01-17 JP JP626172A patent/JPS5146382B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NL7200562A (fr) | 1972-07-18 |
| DE2201028A1 (de) | 1972-08-31 |
| JPS5146382B1 (fr) | 1976-12-08 |
| FR2121824A1 (fr) | 1972-08-25 |
| DE2201028B2 (de) | 1979-01-18 |
| IT962050B (it) | 1973-12-20 |
| GB1383981A (en) | 1974-02-12 |
| CA946524A (en) | 1974-04-30 |
| FR2121824B1 (fr) | 1977-04-01 |
| DE2201028C3 (de) | 1981-07-09 |
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