BE820447A - Dispositif a transistors a effet de champ - Google Patents
Dispositif a transistors a effet de champInfo
- Publication number
- BE820447A BE820447A BE148986A BE148986A BE820447A BE 820447 A BE820447 A BE 820447A BE 148986 A BE148986 A BE 148986A BE 148986 A BE148986 A BE 148986A BE 820447 A BE820447 A BE 820447A
- Authority
- BE
- Belgium
- Prior art keywords
- field
- effect transistor
- transistor device
- effect
- transistor
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/0883—Combination of depletion and enhancement field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19732348984 DE2348984A1 (de) | 1973-09-28 | 1973-09-28 | Anordnung mit feldeffekttransistoren |
Publications (1)
Publication Number | Publication Date |
---|---|
BE820447A true BE820447A (fr) | 1975-01-16 |
Family
ID=5894060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE148986A BE820447A (fr) | 1973-09-28 | 1974-09-27 | Dispositif a transistors a effet de champ |
Country Status (11)
Country | Link |
---|---|
US (1) | US3975718A (fr) |
JP (1) | JPS5725915B2 (fr) |
BE (1) | BE820447A (fr) |
CA (1) | CA1046640A (fr) |
DE (1) | DE2348984A1 (fr) |
DK (1) | DK513174A (fr) |
FR (1) | FR2258004B1 (fr) |
GB (1) | GB1486798A (fr) |
IT (1) | IT1022332B (fr) |
LU (1) | LU71006A1 (fr) |
NL (1) | NL7412817A (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52153630A (en) * | 1976-06-16 | 1977-12-20 | Matsushita Electric Ind Co Ltd | Semiconductor memory device |
GB1575741A (en) * | 1977-01-17 | 1980-09-24 | Philips Electronic Associated | Integrated circuits |
US4191898A (en) * | 1978-05-01 | 1980-03-04 | Motorola, Inc. | High voltage CMOS circuit |
US4707808A (en) * | 1985-04-26 | 1987-11-17 | Rockwell International Corporation | Small size, high speed GaAs data latch |
DE4041260A1 (de) * | 1990-12-21 | 1992-07-02 | Messerschmitt Boelkow Blohm | Ausleseschaltung fuer eine statische speicherzelle |
TWI381620B (zh) * | 2009-05-15 | 2013-01-01 | Glacialtech Inc | 具邏輯控制之無橋式功因修正器 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3753248A (en) * | 1972-06-09 | 1973-08-14 | Bell Telephone Labor Inc | Two-terminal nondestructive read jfet-npn transistor semiconductor memory |
-
1973
- 1973-09-28 DE DE19732348984 patent/DE2348984A1/de not_active Ceased
-
1974
- 1974-09-18 FR FR7431498A patent/FR2258004B1/fr not_active Expired
- 1974-09-25 US US05/509,309 patent/US3975718A/en not_active Expired - Lifetime
- 1974-09-26 LU LU71006A patent/LU71006A1/xx unknown
- 1974-09-26 IT IT27729/74A patent/IT1022332B/it active
- 1974-09-27 DK DK513174A patent/DK513174A/da unknown
- 1974-09-27 BE BE148986A patent/BE820447A/fr unknown
- 1974-09-27 CA CA210,248A patent/CA1046640A/fr not_active Expired
- 1974-09-27 JP JP11137874A patent/JPS5725915B2/ja not_active Expired
- 1974-09-27 GB GB42026/74A patent/GB1486798A/en not_active Expired
- 1974-09-27 NL NL7412817A patent/NL7412817A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
IT1022332B (it) | 1978-03-20 |
US3975718A (en) | 1976-08-17 |
JPS5725915B2 (fr) | 1982-06-01 |
NL7412817A (nl) | 1975-04-02 |
FR2258004A1 (fr) | 1975-08-08 |
GB1486798A (en) | 1977-09-21 |
FR2258004B1 (fr) | 1978-08-11 |
DE2348984A1 (de) | 1975-04-24 |
LU71006A1 (fr) | 1975-04-17 |
CA1046640A (fr) | 1979-01-16 |
JPS5062334A (fr) | 1975-05-28 |
DK513174A (fr) | 1975-05-12 |
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