CA813537A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
CA813537A
CA813537A CA813537DA CA813537A CA 813537 A CA813537 A CA 813537A CA 813537D A CA813537D A CA 813537DA CA 813537 A CA813537 A CA 813537A
Authority
CA
Grant status
Grant
Patent type
Prior art keywords
memory device
semiconductor memory
semiconductor
device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Inventor
Joseph H. Scott, Jr.
T. Wallmark John
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
JOSEPH H. SCOTT, JR.
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/33Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/792Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
CA813537A 1967-10-17 Semiconductor memory device Expired CA813537A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US67581967 true 1967-10-17 1967-10-17

Publications (1)

Publication Number Publication Date
CA813537A true CA813537A (en) 1969-05-20

Family

ID=24712096

Family Applications (1)

Application Number Title Priority Date Filing Date
CA813537A Expired CA813537A (en) 1967-10-17 Semiconductor memory device

Country Status (8)

Country Link
JP (2) JPS4812372B1 (en)
BE (1) BE722411A (en)
CA (1) CA813537A (en)
DE (1) DE1803035B2 (en)
ES (1) ES359165A1 (en)
FR (1) FR1593047A (en)
GB (1) GB1247892A (en)
NL (1) NL6814796A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2067335A1 (en) * 1969-11-17 1971-08-20 Inst Halvledarfors
US3633078A (en) * 1969-10-24 1972-01-04 Hughes Aircraft Co Stable n-channel tetrode
US3649884A (en) * 1969-06-06 1972-03-14 Nippon Electric Co Field effect semiconductor device with memory function
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
US3728695A (en) * 1971-10-06 1973-04-17 Intel Corp Random-access floating gate mos memory array
JPS4843591A (en) * 1971-10-04 1973-06-23
DE2261522A1 (en) * 1971-12-17 1973-07-12 Matsushita Electronics Corp Semiconductor memory unit
US3755721A (en) * 1970-06-15 1973-08-28 Intel Corp Floating gate solid state storage device and method for charging and discharging same
US3758797A (en) * 1971-07-07 1973-09-11 Signetics Corp Solid state bistable switching device and method
JPS4969091A (en) * 1972-11-08 1974-07-04
JPS524151B1 (en) * 1975-08-28 1977-02-01
JPS5223233B1 (en) * 1976-08-28 1977-06-22
US4404659A (en) * 1979-10-05 1983-09-13 Hitachi, Ltd. Programmable read only memory
US4558344A (en) * 1982-01-29 1985-12-10 Seeq Technology, Inc. Electrically-programmable and electrically-erasable MOS memory device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2201028C3 (en) * 1971-01-15 1981-07-09 Intel Corp
DE2125681C2 (en) * 1971-05-24 1982-05-13 Sperry Corp., 10104 New York, N.Y., Us Memory with reduced write-on time - by using bipolar rectangular wave as gate signal for FETs
JPS5024084A (en) * 1973-07-05 1975-03-14
JPS50150914A (en) * 1974-05-24 1975-12-04
JPS5528232B2 (en) * 1974-11-01 1980-07-26
DE19614010C2 (en) 1996-04-09 2002-09-19 Infineon Technologies Ag A semiconductor device with adjustable, based on a tunnel current controlled avalanche breakdown current gain and process for its preparation
US20160254056A1 (en) * 2015-02-27 2016-09-01 Qualcomm Incorporated System, apparatus, and method of programming a one-time programmable memory circuit

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649884A (en) * 1969-06-06 1972-03-14 Nippon Electric Co Field effect semiconductor device with memory function
US3633078A (en) * 1969-10-24 1972-01-04 Hughes Aircraft Co Stable n-channel tetrode
FR2067335A1 (en) * 1969-11-17 1971-08-20 Inst Halvledarfors
US3755721A (en) * 1970-06-15 1973-08-28 Intel Corp Floating gate solid state storage device and method for charging and discharging same
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
US3758797A (en) * 1971-07-07 1973-09-11 Signetics Corp Solid state bistable switching device and method
JPS5543264B2 (en) * 1971-10-04 1980-11-05
JPS4843591A (en) * 1971-10-04 1973-06-23
US3728695A (en) * 1971-10-06 1973-04-17 Intel Corp Random-access floating gate mos memory array
DE2261522A1 (en) * 1971-12-17 1973-07-12 Matsushita Electronics Corp Semiconductor memory unit
JPS4969091A (en) * 1972-11-08 1974-07-04
JPS56950B2 (en) * 1972-11-08 1981-01-10
JPS524151B1 (en) * 1975-08-28 1977-02-01
JPS5223233B1 (en) * 1976-08-28 1977-06-22
US4404659A (en) * 1979-10-05 1983-09-13 Hitachi, Ltd. Programmable read only memory
US4558344A (en) * 1982-01-29 1985-12-10 Seeq Technology, Inc. Electrically-programmable and electrically-erasable MOS memory device

Also Published As

Publication number Publication date Type
DE1803035B2 (en) 1979-11-08 application
JPS4812372B1 (en) 1973-04-20 grant
BE722411A (en) 1969-04-01 grant
JPS5436446B1 (en) 1979-11-09 grant
NL6814796A (en) 1969-04-21 application
FR1593047A (en) 1970-05-25 grant
ES359165A1 (en) 1970-05-16 application
GB1247892A (en) 1971-09-29 application
DE1803035A1 (en) 1969-05-22 application

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