GB1247892A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
GB1247892A
GB1247892A GB4599168A GB4599168A GB1247892A GB 1247892 A GB1247892 A GB 1247892A GB 4599168 A GB4599168 A GB 4599168A GB 4599168 A GB4599168 A GB 4599168A GB 1247892 A GB1247892 A GB 1247892A
Authority
GB
United Kingdom
Prior art keywords
layer
nitride
disposed
field effect
charge storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4599168A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1247892A publication Critical patent/GB1247892A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/33—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

1,247,892. Field effect memory devices. R.C.A. CORPORATION. 27 Sept., 1968 [17 Oct., 1967], No. 45991/68. Heading H1K. A field effect semiconductor device exhibiting a memory comprises a layer of insulation not more than 25 Š thick, which is less than the tunnelling distance, disposed on a semiconductor body and overlain by a charge storage layer. One embodiment consists of an IGFET with a 25 Š thick layer of silica over the channel and a silicon nitride charge storage layer on top of it, with a gate electrode disposed on the nitride. Alternatively the nitride is replaced by a metal or polycrystalline silicon layer insulated from the gate electrode by a layer of silica. In another embodiment an annular gate structure of either of the above types is disposed over the PN junction of a planar diode. The IGFETs exhibit two stable valves of threshold voltage according to whether a positive or negative write in pulse was applied to the gate and the gated diode exhibits two stable valves of reverse breakdown voltage and capacitance. The theory of operation is discussed.
GB4599168A 1967-10-17 1968-09-27 Semiconductor memory device Expired GB1247892A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67581967A 1967-10-17 1967-10-17

Publications (1)

Publication Number Publication Date
GB1247892A true GB1247892A (en) 1971-09-29

Family

ID=24712096

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4599168A Expired GB1247892A (en) 1967-10-17 1968-09-27 Semiconductor memory device

Country Status (11)

Country Link
JP (2) JPS4812372B1 (en)
BE (1) BE722411A (en)
BR (1) BR6802844D0 (en)
CA (1) CA813537A (en)
DE (1) DE1803035B2 (en)
ES (1) ES359165A1 (en)
FR (1) FR1593047A (en)
GB (1) GB1247892A (en)
MY (1) MY7300390A (en)
NL (1) NL6814796A (en)
SU (1) SU409454A3 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016137734A3 (en) * 2015-02-27 2016-11-24 Qualcomm Incorporated System, apparatus, and method of programming a one-time programmable memory circuit

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS497870B1 (en) * 1969-06-06 1974-02-22
US3633078A (en) * 1969-10-24 1972-01-04 Hughes Aircraft Co Stable n-channel tetrode
SE337430B (en) * 1969-11-17 1971-08-09 Inst Halvledarforskning Ab
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
US3755721A (en) * 1970-06-15 1973-08-28 Intel Corp Floating gate solid state storage device and method for charging and discharging same
DE2201028C3 (en) * 1971-01-15 1981-07-09 Intel Corp., Mountain View, Calif. Method for operating a field effect transistor and field effect transistor for carrying out this method
DE2125681C2 (en) * 1971-05-24 1982-05-13 Sperry Corp., 10104 New York, N.Y. Memory with reduced write-on time - by using bipolar rectangular wave as gate signal for FETs
US3758797A (en) * 1971-07-07 1973-09-11 Signetics Corp Solid state bistable switching device and method
CH539360A (en) * 1971-09-30 1973-07-15 Ibm Semiconductor switching or memory device
JPS5543264B2 (en) * 1971-10-04 1980-11-05
US3728695A (en) * 1971-10-06 1973-04-17 Intel Corp Random-access floating gate mos memory array
JPS4866943A (en) * 1971-12-17 1973-09-13
JPS56950B2 (en) * 1972-11-08 1981-01-10
JPS5024084A (en) * 1973-07-05 1975-03-14
JPS50150914A (en) * 1974-05-24 1975-12-04
JPS5528232B2 (en) * 1974-11-01 1980-07-26
JPS524151B1 (en) * 1975-08-28 1977-02-01
JPS5223233B1 (en) * 1976-08-28 1977-06-22
IT1110947B (en) * 1978-01-19 1986-01-13 Sperry Rand Corp COMMAND ACCESS MEMORY ELEMENT
JPS5654693A (en) * 1979-10-05 1981-05-14 Hitachi Ltd Programable rom
US4558344A (en) * 1982-01-29 1985-12-10 Seeq Technology, Inc. Electrically-programmable and electrically-erasable MOS memory device
DE19614010C2 (en) * 1996-04-09 2002-09-19 Infineon Technologies Ag Semiconductor component with adjustable current amplification based on a tunnel current controlled avalanche breakdown and method for its production

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016137734A3 (en) * 2015-02-27 2016-11-24 Qualcomm Incorporated System, apparatus, and method of programming a one-time programmable memory circuit
US10290352B2 (en) 2015-02-27 2019-05-14 Qualcomm Incorporated System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regions

Also Published As

Publication number Publication date
JPS5436446B1 (en) 1979-11-09
JPS4812372B1 (en) 1973-04-20
SU409454A3 (en) 1973-11-30
DE1803035A1 (en) 1969-05-22
BR6802844D0 (en) 1973-01-04
NL6814796A (en) 1969-04-21
CA813537A (en) 1969-05-20
MY7300390A (en) 1973-12-31
DE1803035B2 (en) 1979-11-08
ES359165A1 (en) 1970-05-16
BE722411A (en) 1969-04-01
FR1593047A (en) 1970-05-25

Similar Documents

Publication Publication Date Title
GB1247892A (en) Semiconductor memory device
GB1315230A (en) Insulated gate field effect memory transistor
GB1460599A (en) Memory cell
GB1483029A (en) Memory systems
GB1425985A (en) Arrangements including semiconductor memory devices
ES388720A1 (en) Monolithic semiconductor apparatus adapted for sequential charge transfer
GB1524864A (en) Monolithic semiconductor arrangements
GB1383981A (en) Electrically alterable floating gate device and method for altering same
GB1154892A (en) Semiconductor Devices
GB1518984A (en) Integrated circuit
GB1186421A (en) Insulated-Gate Field-Effect Transistor
GB1065150A (en) Semiconductor switch
GB1450167A (en) Integrated citcuits
GB1322933A (en) Semiconductor device
JPS5718356A (en) Semiconductor memory storage
GB1400780A (en) Insulated gate field effect transistors
GB1374009A (en) Information storage
GB1535019A (en) Field effect devices
GB1179388A (en) Electrical Protective Circuit for Metal-Oxide-Semiconductor Transistors
JPS5565458A (en) Memory cell
GB1066159A (en) Semiconductor devices
JPS5228277A (en) Non-voltatile semiconductor memory device
GB1434652A (en) Semiconductor devices
ES321146A1 (en) A semiconductor device. (Machine-translation by Google Translate, not legally binding)
GB1078273A (en) Semiconductor device