GB1247892A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- GB1247892A GB1247892A GB4599168A GB4599168A GB1247892A GB 1247892 A GB1247892 A GB 1247892A GB 4599168 A GB4599168 A GB 4599168A GB 4599168 A GB4599168 A GB 4599168A GB 1247892 A GB1247892 A GB 1247892A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- nitride
- disposed
- field effect
- charge storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 230000005669 field effect Effects 0.000 abstract 2
- 150000004767 nitrides Chemical class 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/33—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices exhibiting hole storage or enhancement effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Abstract
1,247,892. Field effect memory devices. R.C.A. CORPORATION. 27 Sept., 1968 [17 Oct., 1967], No. 45991/68. Heading H1K. A field effect semiconductor device exhibiting a memory comprises a layer of insulation not more than 25 Š thick, which is less than the tunnelling distance, disposed on a semiconductor body and overlain by a charge storage layer. One embodiment consists of an IGFET with a 25 Š thick layer of silica over the channel and a silicon nitride charge storage layer on top of it, with a gate electrode disposed on the nitride. Alternatively the nitride is replaced by a metal or polycrystalline silicon layer insulated from the gate electrode by a layer of silica. In another embodiment an annular gate structure of either of the above types is disposed over the PN junction of a planar diode. The IGFETs exhibit two stable valves of threshold voltage according to whether a positive or negative write in pulse was applied to the gate and the gated diode exhibits two stable valves of reverse breakdown voltage and capacitance. The theory of operation is discussed.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US67581967A | 1967-10-17 | 1967-10-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1247892A true GB1247892A (en) | 1971-09-29 |
Family
ID=24712096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4599168A Expired GB1247892A (en) | 1967-10-17 | 1968-09-27 | Semiconductor memory device |
Country Status (11)
Country | Link |
---|---|
JP (2) | JPS4812372B1 (en) |
BE (1) | BE722411A (en) |
BR (1) | BR6802844D0 (en) |
CA (1) | CA813537A (en) |
DE (1) | DE1803035B2 (en) |
ES (1) | ES359165A1 (en) |
FR (1) | FR1593047A (en) |
GB (1) | GB1247892A (en) |
MY (1) | MY7300390A (en) |
NL (1) | NL6814796A (en) |
SU (1) | SU409454A3 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016137734A3 (en) * | 2015-02-27 | 2016-11-24 | Qualcomm Incorporated | System, apparatus, and method of programming a one-time programmable memory circuit |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS497870B1 (en) * | 1969-06-06 | 1974-02-22 | ||
US3633078A (en) * | 1969-10-24 | 1972-01-04 | Hughes Aircraft Co | Stable n-channel tetrode |
SE337430B (en) * | 1969-11-17 | 1971-08-09 | Inst Halvledarforskning Ab | |
US3660819A (en) * | 1970-06-15 | 1972-05-02 | Intel Corp | Floating gate transistor and method for charging and discharging same |
US3755721A (en) * | 1970-06-15 | 1973-08-28 | Intel Corp | Floating gate solid state storage device and method for charging and discharging same |
DE2201028C3 (en) * | 1971-01-15 | 1981-07-09 | Intel Corp., Mountain View, Calif. | Method for operating a field effect transistor and field effect transistor for carrying out this method |
DE2125681C2 (en) * | 1971-05-24 | 1982-05-13 | Sperry Corp., 10104 New York, N.Y. | Memory with reduced write-on time - by using bipolar rectangular wave as gate signal for FETs |
US3758797A (en) * | 1971-07-07 | 1973-09-11 | Signetics Corp | Solid state bistable switching device and method |
CH539360A (en) * | 1971-09-30 | 1973-07-15 | Ibm | Semiconductor switching or memory device |
JPS5543264B2 (en) * | 1971-10-04 | 1980-11-05 | ||
US3728695A (en) * | 1971-10-06 | 1973-04-17 | Intel Corp | Random-access floating gate mos memory array |
JPS4866943A (en) * | 1971-12-17 | 1973-09-13 | ||
JPS56950B2 (en) * | 1972-11-08 | 1981-01-10 | ||
JPS5024084A (en) * | 1973-07-05 | 1975-03-14 | ||
JPS50150914A (en) * | 1974-05-24 | 1975-12-04 | ||
JPS5528232B2 (en) * | 1974-11-01 | 1980-07-26 | ||
JPS524151B1 (en) * | 1975-08-28 | 1977-02-01 | ||
JPS5223233B1 (en) * | 1976-08-28 | 1977-06-22 | ||
IT1110947B (en) * | 1978-01-19 | 1986-01-13 | Sperry Rand Corp | COMMAND ACCESS MEMORY ELEMENT |
JPS5654693A (en) * | 1979-10-05 | 1981-05-14 | Hitachi Ltd | Programable rom |
US4558344A (en) * | 1982-01-29 | 1985-12-10 | Seeq Technology, Inc. | Electrically-programmable and electrically-erasable MOS memory device |
DE19614010C2 (en) * | 1996-04-09 | 2002-09-19 | Infineon Technologies Ag | Semiconductor component with adjustable current amplification based on a tunnel current controlled avalanche breakdown and method for its production |
-
0
- CA CA813537A patent/CA813537A/en not_active Expired
-
1968
- 1968-09-27 GB GB4599168A patent/GB1247892A/en not_active Expired
- 1968-10-02 SU SU1274193A patent/SU409454A3/ru active
- 1968-10-03 BR BR20284468A patent/BR6802844D0/en unknown
- 1968-10-08 FR FR1593047D patent/FR1593047A/fr not_active Expired
- 1968-10-14 DE DE19681803035 patent/DE1803035B2/en not_active Ceased
- 1968-10-15 ES ES359165A patent/ES359165A1/en not_active Expired
- 1968-10-16 NL NL6814796A patent/NL6814796A/xx unknown
- 1968-10-16 BE BE722411D patent/BE722411A/xx unknown
- 1968-10-17 JP JP7571768A patent/JPS4812372B1/ja active Pending
-
1973
- 1973-12-30 MY MY7300390A patent/MY7300390A/en unknown
-
1974
- 1974-04-16 JP JP4324574A patent/JPS5436446B1/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016137734A3 (en) * | 2015-02-27 | 2016-11-24 | Qualcomm Incorporated | System, apparatus, and method of programming a one-time programmable memory circuit |
US10290352B2 (en) | 2015-02-27 | 2019-05-14 | Qualcomm Incorporated | System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regions |
Also Published As
Publication number | Publication date |
---|---|
JPS5436446B1 (en) | 1979-11-09 |
JPS4812372B1 (en) | 1973-04-20 |
SU409454A3 (en) | 1973-11-30 |
DE1803035A1 (en) | 1969-05-22 |
BR6802844D0 (en) | 1973-01-04 |
NL6814796A (en) | 1969-04-21 |
CA813537A (en) | 1969-05-20 |
MY7300390A (en) | 1973-12-31 |
DE1803035B2 (en) | 1979-11-08 |
ES359165A1 (en) | 1970-05-16 |
BE722411A (en) | 1969-04-01 |
FR1593047A (en) | 1970-05-25 |
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