GB1374009A - Information storage - Google Patents
Information storageInfo
- Publication number
- GB1374009A GB1374009A GB2941972A GB2941972A GB1374009A GB 1374009 A GB1374009 A GB 1374009A GB 2941972 A GB2941972 A GB 2941972A GB 2941972 A GB2941972 A GB 2941972A GB 1374009 A GB1374009 A GB 1374009A
- Authority
- GB
- United Kingdom
- Prior art keywords
- storage
- electrode
- semi
- layer
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 108091006146 Channels Proteins 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009825 accumulation Methods 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 239000005360 phosphosilicate glass Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000004408 titanium dioxide Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Non-Volatile Memory (AREA)
Abstract
1374009 Semi-conductor memory elements INTERNATIONAL BUSINESS MACHINES CORP 23 June 1972 [9 Aug 1971] 29419/72 Heading H1K Binary information is represented by the presence or absence of charge stored at the surface of a semi-conductor body 8 beneath a storage electrode 14, the charge being transferred between the storage site and a diffused region 11 forming a PN junction with the body 8 via an inversion channel induced in the body 8 by a potential applied to a gate electrode 16. The region 11 carries an ohmic electrode through which current is carried for reading and writing purposes. Preferably the storage and gate electrodes 14, 16 are capacitively coupled to the body 8 through a silicon oxide layer 28 and an overlying layer 30 of silicon nitride, aluminium oxide, titanium dioxide or phosphosilicate glass. As shown the gate electrode 16 comprises doped polycrystalline Si and the storage electrode 14 comprises a metal layer, the electrodes 14, 16 being mutually isolated by a thin oxide layer. In a modification the storage electrode 14 is made of polycrystalline Si while the gate electrode 16 is a metal layer. In a memory array of such elements word, bit and storage potential lines are formed by metal or polycrystalline Si tracks on an insulating layer or by elongate diffused semi-conductor strips. The circuit schematically represented in Fig. 4A, is intended for use in a charge depletion mode, alternative circuitry being described for accumulation mode use.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16996171A | 1971-08-09 | 1971-08-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1374009A true GB1374009A (en) | 1974-11-13 |
Family
ID=22617925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2941972A Expired GB1374009A (en) | 1971-08-09 | 1972-06-23 | Information storage |
Country Status (10)
| Country | Link |
|---|---|
| JP (1) | JPS5314351B2 (en) |
| AR (1) | AR200242A1 (en) |
| BR (2) | BR7205403D0 (en) |
| CH (1) | CH534939A (en) |
| DE (1) | DE2236510C3 (en) |
| FR (1) | FR2148581B1 (en) |
| GB (1) | GB1374009A (en) |
| IT (1) | IT963412B (en) |
| NL (1) | NL7209890A (en) |
| SE (1) | SE384756B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2705757A1 (en) * | 1976-02-13 | 1977-08-18 | Tokyo Shibaura Electric Co | RAM |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ES404184A1 (en) * | 1971-07-06 | 1975-06-01 | Ibm | A cellular disposal of casual access memory for digital calculators. (Machine-translation by Google Translate, not legally binding) |
| DE2441385C3 (en) * | 1974-08-29 | 1981-05-07 | Siemens AG, 1000 Berlin und 8000 München | Method for increasing the read signal in a one-transistor memory element |
| JPS51147226A (en) * | 1975-06-13 | 1976-12-17 | Nec Corp | Semiconductor memory device |
| JPS5811103B2 (en) * | 1975-11-07 | 1983-03-01 | 株式会社日立製作所 | hand tie memory |
| GB1562650A (en) * | 1976-11-18 | 1980-03-12 | Fairchild Camera Instr Co | Memory cell for storing charge |
| EP0003413A3 (en) * | 1978-01-19 | 1979-08-22 | Sperry Corporation | Improvements relating to semiconductor memories |
| DE2912858A1 (en) * | 1979-03-30 | 1980-10-09 | Siemens Ag | LOW RESISTANT PIPE |
| JPH0782753B2 (en) * | 1984-08-31 | 1995-09-06 | 三菱電機株式会社 | Dynamic memory device |
-
1972
- 1972-06-23 GB GB2941972A patent/GB1374009A/en not_active Expired
- 1972-07-06 SE SE7208905A patent/SE384756B/en unknown
- 1972-07-14 JP JP7008672A patent/JPS5314351B2/ja not_active Expired
- 1972-07-18 NL NL7209890A patent/NL7209890A/xx unknown
- 1972-07-26 DE DE2236510A patent/DE2236510C3/en not_active Expired
- 1972-07-26 FR FR7228829A patent/FR2148581B1/fr not_active Expired
- 1972-07-27 IT IT27478/72A patent/IT963412B/en active
- 1972-07-28 CH CH1133272A patent/CH534939A/en not_active IP Right Cessation
- 1972-08-09 BR BR5403/72A patent/BR7205403D0/en unknown
- 1972-08-09 BR BR5394/72A patent/BR7205394D0/en unknown
- 1972-08-21 AR AR243646A patent/AR200242A1/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2705757A1 (en) * | 1976-02-13 | 1977-08-18 | Tokyo Shibaura Electric Co | RAM |
Also Published As
| Publication number | Publication date |
|---|---|
| CH534939A (en) | 1973-03-15 |
| FR2148581B1 (en) | 1980-03-21 |
| JPS4826437A (en) | 1973-04-07 |
| SE384756B (en) | 1976-05-17 |
| FR2148581A1 (en) | 1973-03-23 |
| NL7209890A (en) | 1973-02-13 |
| JPS5314351B2 (en) | 1978-05-17 |
| BR7205394D0 (en) | 1973-06-07 |
| AR200242A1 (en) | 1974-10-31 |
| DE2236510B2 (en) | 1974-05-22 |
| BR7205403D0 (en) | 1973-06-07 |
| DE2236510A1 (en) | 1973-03-08 |
| IT963412B (en) | 1974-01-10 |
| DE2236510C3 (en) | 1975-01-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |