JPS51147226A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS51147226A
JPS51147226A JP50071756A JP7175675A JPS51147226A JP S51147226 A JPS51147226 A JP S51147226A JP 50071756 A JP50071756 A JP 50071756A JP 7175675 A JP7175675 A JP 7175675A JP S51147226 A JPS51147226 A JP S51147226A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
eliminating
domain
reduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50071756A
Other languages
Japanese (ja)
Other versions
JPS5634098B2 (en
Inventor
Tadashi Kuragami
Yoshiharu Fujimoto
Taiichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP50071756A priority Critical patent/JPS51147226A/en
Publication of JPS51147226A publication Critical patent/JPS51147226A/en
Publication of JPS5634098B2 publication Critical patent/JPS5634098B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:Reduction in an area by eliminating a source diffusing domain in a mos transistor.
JP50071756A 1975-06-13 1975-06-13 Semiconductor memory device Granted JPS51147226A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50071756A JPS51147226A (en) 1975-06-13 1975-06-13 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50071756A JPS51147226A (en) 1975-06-13 1975-06-13 Semiconductor memory device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP57077785A Division JPS57206068A (en) 1982-05-10 1982-05-10 Semiconductor memory device
JP57077786A Division JPS57206069A (en) 1982-05-10 1982-05-10 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS51147226A true JPS51147226A (en) 1976-12-17
JPS5634098B2 JPS5634098B2 (en) 1981-08-07

Family

ID=13469687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50071756A Granted JPS51147226A (en) 1975-06-13 1975-06-13 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS51147226A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826437A (en) * 1971-08-09 1973-04-07
JPS4864889A (en) * 1971-12-08 1973-09-07
JPS4964382A (en) * 1972-06-30 1974-06-21
JPS51114079A (en) * 1975-03-31 1976-10-07 Fujitsu Ltd Construction of semiconductor memory device
JPS51137339A (en) * 1975-05-05 1976-11-27 Intel Corp Integrated circuit memory
JPS51142932A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Semiconductor memory devices

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826437A (en) * 1971-08-09 1973-04-07
JPS4864889A (en) * 1971-12-08 1973-09-07
JPS4964382A (en) * 1972-06-30 1974-06-21
JPS51114079A (en) * 1975-03-31 1976-10-07 Fujitsu Ltd Construction of semiconductor memory device
JPS51137339A (en) * 1975-05-05 1976-11-27 Intel Corp Integrated circuit memory
JPS51142932A (en) * 1975-06-04 1976-12-08 Hitachi Ltd Semiconductor memory devices

Also Published As

Publication number Publication date
JPS5634098B2 (en) 1981-08-07

Similar Documents

Publication Publication Date Title
NL7500550A (en) SEMICONDUCTOR MEMORY DEVICE.
NL7614537A (en) SEMICONDUCTOR MEMORY DEVICE.
JPS51135382A (en) Mos transistor
NL187461C (en) SEMICONDUCTOR DEVICE.
JPS51135373A (en) Semiconductor device
JPS53108392A (en) Semiconductor device
IT8125510A0 (en) SEMICONDUCTOR DEVICE, ESPECIALLY POWER TRANSISTOR.
FR2288397A1 (en) SEMICONDUCTOR MOS TYPE DEVICE
JPS51150284A (en) Semiconductor unvolatile memory unit
JPS51147226A (en) Semiconductor memory device
NL177364C (en) SEMICONDUCTOR DEVICE.
JPS5275987A (en) Gate protecting device
JPS5211880A (en) Semiconductor integrated circuit device
NL191768B (en) Semiconductor memory device, comprising n-type channel MOS field effect transistors.
JPS5215274A (en) Semiconductor device
JPS52108743A (en) Dynamic memory device
JPS51140490A (en) Lateral transistor
JPS526036A (en) Semiconductor memory circuit
NL185484C (en) SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING AT LEAST A TRANSISTOR.
JPS51147188A (en) Semicoductor device
JPS5211883A (en) Semiconductor integrated circuit device
JPS51111043A (en) Mis logical circuit
JPS5234642A (en) Information processing device with debugging facilities
JPS5268393A (en) Semiconductor device
JPS51147133A (en) Non-voratile insulation gate semiconductor memory