JPS5215274A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5215274A
JPS5215274A JP9121575A JP9121575A JPS5215274A JP S5215274 A JPS5215274 A JP S5215274A JP 9121575 A JP9121575 A JP 9121575A JP 9121575 A JP9121575 A JP 9121575A JP S5215274 A JPS5215274 A JP S5215274A
Authority
JP
Japan
Prior art keywords
semiconductor device
drain
compact
gate
positioning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9121575A
Other languages
Japanese (ja)
Inventor
Kyohiko Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9121575A priority Critical patent/JPS5215274A/en
Publication of JPS5215274A publication Critical patent/JPS5215274A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make the MOS transistor more compact by positioning the lower surface of the gate on the plane on which the lower surfaces of the source and drain are positioned.
COPYRIGHT: (C)1977,JPO&Japio
JP9121575A 1975-07-25 1975-07-25 Semiconductor device Pending JPS5215274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9121575A JPS5215274A (en) 1975-07-25 1975-07-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9121575A JPS5215274A (en) 1975-07-25 1975-07-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5215274A true JPS5215274A (en) 1977-02-04

Family

ID=14020190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9121575A Pending JPS5215274A (en) 1975-07-25 1975-07-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5215274A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5452478A (en) * 1977-10-04 1979-04-25 Seiko Epson Corp Semiconductor device
JPS61241980A (en) * 1985-04-18 1986-10-28 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
US5108938A (en) * 1989-03-21 1992-04-28 Grumman Aerospace Corporation Method of making a trench gate complimentary metal oxide semiconductor transistor
US5248893A (en) * 1990-02-26 1993-09-28 Advanced Micro Devices, Inc. Insulated gate field effect device with a smoothly curved depletion boundary in the vicinity of the channel-free zone
US6150693A (en) * 1996-09-18 2000-11-21 Advanced Micro Devices Short channel non-self aligned VMOS field effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5452478A (en) * 1977-10-04 1979-04-25 Seiko Epson Corp Semiconductor device
JPS61241980A (en) * 1985-04-18 1986-10-28 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
US5108938A (en) * 1989-03-21 1992-04-28 Grumman Aerospace Corporation Method of making a trench gate complimentary metal oxide semiconductor transistor
US5248893A (en) * 1990-02-26 1993-09-28 Advanced Micro Devices, Inc. Insulated gate field effect device with a smoothly curved depletion boundary in the vicinity of the channel-free zone
US6150693A (en) * 1996-09-18 2000-11-21 Advanced Micro Devices Short channel non-self aligned VMOS field effect transistor

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