JPS5215274A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5215274A JPS5215274A JP9121575A JP9121575A JPS5215274A JP S5215274 A JPS5215274 A JP S5215274A JP 9121575 A JP9121575 A JP 9121575A JP 9121575 A JP9121575 A JP 9121575A JP S5215274 A JPS5215274 A JP S5215274A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- drain
- compact
- gate
- positioning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To make the MOS transistor more compact by positioning the lower surface of the gate on the plane on which the lower surfaces of the source and drain are positioned.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9121575A JPS5215274A (en) | 1975-07-25 | 1975-07-25 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9121575A JPS5215274A (en) | 1975-07-25 | 1975-07-25 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5215274A true JPS5215274A (en) | 1977-02-04 |
Family
ID=14020190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9121575A Pending JPS5215274A (en) | 1975-07-25 | 1975-07-25 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5215274A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5452478A (en) * | 1977-10-04 | 1979-04-25 | Seiko Epson Corp | Semiconductor device |
JPS61241980A (en) * | 1985-04-18 | 1986-10-28 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
US5108938A (en) * | 1989-03-21 | 1992-04-28 | Grumman Aerospace Corporation | Method of making a trench gate complimentary metal oxide semiconductor transistor |
US5248893A (en) * | 1990-02-26 | 1993-09-28 | Advanced Micro Devices, Inc. | Insulated gate field effect device with a smoothly curved depletion boundary in the vicinity of the channel-free zone |
US6150693A (en) * | 1996-09-18 | 2000-11-21 | Advanced Micro Devices | Short channel non-self aligned VMOS field effect transistor |
-
1975
- 1975-07-25 JP JP9121575A patent/JPS5215274A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5452478A (en) * | 1977-10-04 | 1979-04-25 | Seiko Epson Corp | Semiconductor device |
JPS61241980A (en) * | 1985-04-18 | 1986-10-28 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
US5108938A (en) * | 1989-03-21 | 1992-04-28 | Grumman Aerospace Corporation | Method of making a trench gate complimentary metal oxide semiconductor transistor |
US5248893A (en) * | 1990-02-26 | 1993-09-28 | Advanced Micro Devices, Inc. | Insulated gate field effect device with a smoothly curved depletion boundary in the vicinity of the channel-free zone |
US6150693A (en) * | 1996-09-18 | 2000-11-21 | Advanced Micro Devices | Short channel non-self aligned VMOS field effect transistor |
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