GB1408892A - Semiconductor devices for information storage and transfer - Google Patents

Semiconductor devices for information storage and transfer

Info

Publication number
GB1408892A
GB1408892A GB4237072A GB4237072A GB1408892A GB 1408892 A GB1408892 A GB 1408892A GB 4237072 A GB4237072 A GB 4237072A GB 4237072 A GB4237072 A GB 4237072A GB 1408892 A GB1408892 A GB 1408892A
Authority
GB
United Kingdom
Prior art keywords
charges
electrodes
substrate
insulating layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4237072A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1408892A publication Critical patent/GB1408892A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Abstract

1408892 Semi-conductor devices SONY CORP 12 Sept 1972 [15 Sept 1971] 42370/72 Heading H1K A charge coupled device comprises semiconductive substrate 11, an insulating layer thereon which as shown consists of layers 14 and 15, gate electrodes 21a to 24b, with their associated leads, dispersed on the insulating layer and electric charges in discrete regions of the insulating layer, the depth of the potential well beneath a given electrode being determined by the potential applied to that electrode and by the magnitude of the charge stored in the insulating layer beneath that electrode. Layer 14 may be SiO 2 , layer 15 aluminium oxide or silicon nitride. As shown, the charges are distributed non-uniformly but in a regular pattern at the interface between layers 14 and 15. The electrodes are connected in pairs, alternate pairs being connected to the same clock line 25 or 26. The charges may be fixed by injecting carriers from the substrate so that one electrode 21b, 22b, 23b, 24b, of each pair has charges under it, causing a stepped potential well beneath each pair and enabling unidirectional transfer with a two-conductor arrangement. Alternatively (Fig. 4, not shown) saw-tooth potential wells are obtained with single electrodes alternately connected to the clock lines, charges being fixed by diffused regions in the substrate, of the same conductivity, outside the areas covered by the electrodes, the regions being biased simultaneously with voltage applied to the electrodes. Fixed charges may alternatively be obtained by exposing the substrate to a light image. The substrate may be silicon, the electrodes aluminium.
GB4237072A 1971-09-15 1972-09-12 Semiconductor devices for information storage and transfer Expired GB1408892A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8399471U JPS5255987Y2 (en) 1971-09-15 1971-09-15

Publications (1)

Publication Number Publication Date
GB1408892A true GB1408892A (en) 1975-10-08

Family

ID=13818070

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4237072A Expired GB1408892A (en) 1971-09-15 1972-09-12 Semiconductor devices for information storage and transfer

Country Status (7)

Country Link
JP (1) JPS5255987Y2 (en)
CA (1) CA1023469A (en)
DE (1) DE2245422A1 (en)
FR (1) FR2153055B1 (en)
GB (1) GB1408892A (en)
IT (1) IT967514B (en)
NL (1) NL7212580A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0069478A2 (en) * 1981-07-01 1983-01-12 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Metal-insulator-semiconductor devices
GB2149963A (en) * 1983-10-07 1985-06-19 Canon Kk Solid state semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5411673B2 (en) * 1971-11-29 1979-05-16
JPS5760469Y2 (en) * 1978-06-16 1982-12-23
JPS5935472A (en) * 1982-08-23 1984-02-27 Toshiba Corp Charge transfer device
JP3635681B2 (en) * 1994-07-15 2005-04-06 ソニー株式会社 Bias circuit adjustment method, charge transfer device, charge detection device, and adjustment method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0069478A2 (en) * 1981-07-01 1983-01-12 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Metal-insulator-semiconductor devices
EP0069478A3 (en) * 1981-07-01 1983-10-05 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Metal-insulator-semiconductor devices
GB2149963A (en) * 1983-10-07 1985-06-19 Canon Kk Solid state semiconductor device
US5073808A (en) * 1983-10-07 1991-12-17 Canon Kabushiki Kaisha Solid state semiconductor device

Also Published As

Publication number Publication date
JPS5255987Y2 (en) 1977-12-17
FR2153055B1 (en) 1976-01-23
CA1023469A (en) 1977-12-27
DE2245422A1 (en) 1973-03-22
IT967514B (en) 1974-03-11
FR2153055A1 (en) 1973-04-27
JPS4841158U (en) 1973-05-25
NL7212580A (en) 1973-03-19

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee