JPS5387188A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5387188A
JPS5387188A JP162177A JP162177A JPS5387188A JP S5387188 A JPS5387188 A JP S5387188A JP 162177 A JP162177 A JP 162177A JP 162177 A JP162177 A JP 162177A JP S5387188 A JPS5387188 A JP S5387188A
Authority
JP
Japan
Prior art keywords
semiconductor device
miniaturize
type substrate
high resistivity
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP162177A
Other languages
Japanese (ja)
Other versions
JPS5819138B2 (en
Inventor
Takahiro Makino
Yoshihito Amamiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP52001621A priority Critical patent/JPS5819138B2/en
Publication of JPS5387188A publication Critical patent/JPS5387188A/en
Publication of JPS5819138B2 publication Critical patent/JPS5819138B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To facilitate writing and miniaturize the device by applying pulse voltages between silicon semiconductor layers for first, second impurity sources disposed on an insulation type substrate with a high resistivity semiconductor layer in-between.
COPYRIGHT: (C)1978,JPO&Japio
JP52001621A 1977-01-11 1977-01-11 semiconductor equipment Expired JPS5819138B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52001621A JPS5819138B2 (en) 1977-01-11 1977-01-11 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52001621A JPS5819138B2 (en) 1977-01-11 1977-01-11 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5387188A true JPS5387188A (en) 1978-08-01
JPS5819138B2 JPS5819138B2 (en) 1983-04-16

Family

ID=11506589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52001621A Expired JPS5819138B2 (en) 1977-01-11 1977-01-11 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5819138B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103474A (en) * 1979-12-13 1981-08-18 Energy Conversion Devices Inc Diode for rom or eeprom
JPS6415966A (en) * 1987-07-10 1989-01-19 Toshiba Corp Storage device
JPH023278A (en) * 1987-12-28 1990-01-08 Actel Corp Electrically programmable low impedance non-fusible device
JPH06209082A (en) * 1992-11-20 1994-07-26 Philips Electron Nv Semiconductor device provided with programmable element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103474A (en) * 1979-12-13 1981-08-18 Energy Conversion Devices Inc Diode for rom or eeprom
JPS6415966A (en) * 1987-07-10 1989-01-19 Toshiba Corp Storage device
JPH023278A (en) * 1987-12-28 1990-01-08 Actel Corp Electrically programmable low impedance non-fusible device
JPH06209082A (en) * 1992-11-20 1994-07-26 Philips Electron Nv Semiconductor device provided with programmable element

Also Published As

Publication number Publication date
JPS5819138B2 (en) 1983-04-16

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