JPS5387188A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5387188A JPS5387188A JP162177A JP162177A JPS5387188A JP S5387188 A JPS5387188 A JP S5387188A JP 162177 A JP162177 A JP 162177A JP 162177 A JP162177 A JP 162177A JP S5387188 A JPS5387188 A JP S5387188A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- miniaturize
- type substrate
- high resistivity
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To facilitate writing and miniaturize the device by applying pulse voltages between silicon semiconductor layers for first, second impurity sources disposed on an insulation type substrate with a high resistivity semiconductor layer in-between.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52001621A JPS5819138B2 (en) | 1977-01-11 | 1977-01-11 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52001621A JPS5819138B2 (en) | 1977-01-11 | 1977-01-11 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5387188A true JPS5387188A (en) | 1978-08-01 |
JPS5819138B2 JPS5819138B2 (en) | 1983-04-16 |
Family
ID=11506589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52001621A Expired JPS5819138B2 (en) | 1977-01-11 | 1977-01-11 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5819138B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56103474A (en) * | 1979-12-13 | 1981-08-18 | Energy Conversion Devices Inc | Diode for rom or eeprom |
JPS6415966A (en) * | 1987-07-10 | 1989-01-19 | Toshiba Corp | Storage device |
JPH023278A (en) * | 1987-12-28 | 1990-01-08 | Actel Corp | Electrically programmable low impedance non-fusible device |
JPH06209082A (en) * | 1992-11-20 | 1994-07-26 | Philips Electron Nv | Semiconductor device provided with programmable element |
-
1977
- 1977-01-11 JP JP52001621A patent/JPS5819138B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56103474A (en) * | 1979-12-13 | 1981-08-18 | Energy Conversion Devices Inc | Diode for rom or eeprom |
JPS6415966A (en) * | 1987-07-10 | 1989-01-19 | Toshiba Corp | Storage device |
JPH023278A (en) * | 1987-12-28 | 1990-01-08 | Actel Corp | Electrically programmable low impedance non-fusible device |
JPH06209082A (en) * | 1992-11-20 | 1994-07-26 | Philips Electron Nv | Semiconductor device provided with programmable element |
Also Published As
Publication number | Publication date |
---|---|
JPS5819138B2 (en) | 1983-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5315060A (en) | Inching device | |
AU511235B2 (en) | Semiconductor device including an amorphous silicon layer | |
JPS52102690A (en) | Semiconductor capacitance device | |
JPS5293285A (en) | Structure for semiconductor device | |
JPS53104156A (en) | Manufacture for semiconductor device | |
JPS5387188A (en) | Semiconductor device | |
JPS5341192A (en) | Photoelectric conversion element | |
JPS534469A (en) | Semiconductor device | |
JPS5339880A (en) | Field effect type semiconductor device and its production | |
JPS531471A (en) | Manufacture for semiconductor device | |
JPS5316586A (en) | Semiconductor device | |
JPS5365063A (en) | Semiconductor device | |
JPS5356969A (en) | Production of tape for tape carrier | |
JPS5212572A (en) | Semi-conductor device | |
JPS5391622A (en) | Solid state pick up unit | |
JPS5295984A (en) | Vertical junction type field effect transistor | |
JPS53149770A (en) | Semiconductor device | |
JPS5370769A (en) | Production of semiconductor device | |
JPS5384569A (en) | Semiconductor device | |
JPS5384575A (en) | Semicocductor device | |
JPS5380160A (en) | Manufacture of substrate for semiconductor device | |
JPS5362481A (en) | Production of semiconductor device | |
JPS53138279A (en) | Semiconductor device | |
JPS5421182A (en) | Manufacture for semiconductor device | |
JPS5287978A (en) | Bump electrode forming method in semiconductor device |