JPS5362481A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5362481A
JPS5362481A JP13730276A JP13730276A JPS5362481A JP S5362481 A JPS5362481 A JP S5362481A JP 13730276 A JP13730276 A JP 13730276A JP 13730276 A JP13730276 A JP 13730276A JP S5362481 A JPS5362481 A JP S5362481A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
substrate
brazing
mechanically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13730276A
Other languages
Japanese (ja)
Inventor
Tsunao Tsukikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13730276A priority Critical patent/JPS5362481A/en
Publication of JPS5362481A publication Critical patent/JPS5362481A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent damaging during conveying and after element formation like thick substrates by brazing with Ge a second Si substrate of the same conductivity type to a first Si substrate and mechanically and electrically integrating these.
COPYRIGHT: (C)1978,JPO&Japio
JP13730276A 1976-11-17 1976-11-17 Production of semiconductor device Pending JPS5362481A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13730276A JPS5362481A (en) 1976-11-17 1976-11-17 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13730276A JPS5362481A (en) 1976-11-17 1976-11-17 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5362481A true JPS5362481A (en) 1978-06-03

Family

ID=15195500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13730276A Pending JPS5362481A (en) 1976-11-17 1976-11-17 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5362481A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110660655A (en) * 2019-09-30 2020-01-07 闽南师范大学 Bubble-free and threading dislocation-free Ge/Si heterogeneous hybrid integration method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110660655A (en) * 2019-09-30 2020-01-07 闽南师范大学 Bubble-free and threading dislocation-free Ge/Si heterogeneous hybrid integration method
CN110660655B (en) * 2019-09-30 2022-05-03 闽南师范大学 Bubble-free and threading dislocation-free Ge/Si heterogeneous hybrid integration method

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