JPS5362481A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5362481A JPS5362481A JP13730276A JP13730276A JPS5362481A JP S5362481 A JPS5362481 A JP S5362481A JP 13730276 A JP13730276 A JP 13730276A JP 13730276 A JP13730276 A JP 13730276A JP S5362481 A JPS5362481 A JP S5362481A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- substrate
- brazing
- mechanically
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To prevent damaging during conveying and after element formation like thick substrates by brazing with Ge a second Si substrate of the same conductivity type to a first Si substrate and mechanically and electrically integrating these.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13730276A JPS5362481A (en) | 1976-11-17 | 1976-11-17 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13730276A JPS5362481A (en) | 1976-11-17 | 1976-11-17 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5362481A true JPS5362481A (en) | 1978-06-03 |
Family
ID=15195500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13730276A Pending JPS5362481A (en) | 1976-11-17 | 1976-11-17 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5362481A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110660655A (en) * | 2019-09-30 | 2020-01-07 | 闽南师范大学 | Bubble-free and threading dislocation-free Ge/Si heterogeneous hybrid integration method |
-
1976
- 1976-11-17 JP JP13730276A patent/JPS5362481A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110660655A (en) * | 2019-09-30 | 2020-01-07 | 闽南师范大学 | Bubble-free and threading dislocation-free Ge/Si heterogeneous hybrid integration method |
CN110660655B (en) * | 2019-09-30 | 2022-05-03 | 闽南师范大学 | Bubble-free and threading dislocation-free Ge/Si heterogeneous hybrid integration method |
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