JPS52147064A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS52147064A
JPS52147064A JP6487276A JP6487276A JPS52147064A JP S52147064 A JPS52147064 A JP S52147064A JP 6487276 A JP6487276 A JP 6487276A JP 6487276 A JP6487276 A JP 6487276A JP S52147064 A JPS52147064 A JP S52147064A
Authority
JP
Japan
Prior art keywords
semiconductor device
substrate
susceptor
sandwiching
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6487276A
Other languages
Japanese (ja)
Inventor
Yoshihiko Hirose
Mitsuo Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6487276A priority Critical patent/JPS52147064A/en
Publication of JPS52147064A publication Critical patent/JPS52147064A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE: To prevent cracking of a substrate by sandwiching Ti-W alloy between Au layers and connecting the substrate to a susceptor by means of a Pb-Sn-based brazing material.
COPYRIGHT: (C)1977,JPO&Japio
JP6487276A 1976-06-01 1976-06-01 Semiconductor device Pending JPS52147064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6487276A JPS52147064A (en) 1976-06-01 1976-06-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6487276A JPS52147064A (en) 1976-06-01 1976-06-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS52147064A true JPS52147064A (en) 1977-12-07

Family

ID=13270648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6487276A Pending JPS52147064A (en) 1976-06-01 1976-06-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS52147064A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54148375A (en) * 1978-03-22 1979-11-20 Gen Electric Strain buffer for semiconductor device
JPS556839A (en) * 1978-06-28 1980-01-18 Nec Corp Semiconductor device
JPS5519806A (en) * 1978-07-28 1980-02-12 Toshiba Corp Semiconductor device
JPS5519807A (en) * 1978-07-28 1980-02-12 Toshiba Corp Semiconductor device
JPS5519808A (en) * 1978-07-28 1980-02-12 Toshiba Corp Semiconductor device
JPS5519805A (en) * 1978-07-28 1980-02-12 Toshiba Corp Semiconductor device
JPS5541762A (en) * 1978-09-19 1980-03-24 Nec Corp Semiconductor device
JPS61181136A (en) * 1984-12-19 1986-08-13 フエアチアイルド　カメラ　アンド　インストルメント　コ−ポレ−シヨン Die bonding
US7361996B2 (en) 2004-09-08 2008-04-22 Denso Corporation Semiconductor device having tin-based solder layer and method for manufacturing the same

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6336136B2 (en) * 1978-03-22 1988-07-19 Gen Electric
JPS54148375A (en) * 1978-03-22 1979-11-20 Gen Electric Strain buffer for semiconductor device
JPS556839A (en) * 1978-06-28 1980-01-18 Nec Corp Semiconductor device
JPS5519806A (en) * 1978-07-28 1980-02-12 Toshiba Corp Semiconductor device
JPS5519807A (en) * 1978-07-28 1980-02-12 Toshiba Corp Semiconductor device
JPS5519808A (en) * 1978-07-28 1980-02-12 Toshiba Corp Semiconductor device
JPS5519805A (en) * 1978-07-28 1980-02-12 Toshiba Corp Semiconductor device
JPS592174B2 (en) * 1978-07-28 1984-01-17 株式会社東芝 semiconductor equipment
JPS592175B2 (en) * 1978-07-28 1984-01-17 株式会社東芝 semiconductor equipment
JPS5541762A (en) * 1978-09-19 1980-03-24 Nec Corp Semiconductor device
JPS61181136A (en) * 1984-12-19 1986-08-13 フエアチアイルド　カメラ　アンド　インストルメント　コ−ポレ−シヨン Die bonding
US7361996B2 (en) 2004-09-08 2008-04-22 Denso Corporation Semiconductor device having tin-based solder layer and method for manufacturing the same
US7579212B2 (en) 2004-09-08 2009-08-25 Denso Corporation Semiconductor device having tin-based solder layer and method for manufacturing the same

Similar Documents

Publication Publication Date Title
JPS528785A (en) Semiconductor device electrode structure
JPS52147064A (en) Semiconductor device
JPS5380966A (en) Manufacture of electrode fdr semiconductor device
JPS534472A (en) Semiconductor package
JPS5380985A (en) Semiconductor device
JPS5323568A (en) Semiconductor device
JPS5287360A (en) Semiconductor device
JPS5419658A (en) Semiconductor device
JPS5321570A (en) Bonding method of semiconductor substrates
JPS5348671A (en) Electrode structure of semiconductor element
JPS51151069A (en) Electrode forming method of a semiconductor element
JPS5411690A (en) Semiconductor laser unit
JPS5417669A (en) Semiconductor device
JPS542069A (en) Semiconductor device
JPS53116073A (en) Semiconductor device
JPS5361970A (en) Semiconductor element
JPS5344171A (en) Semiconductor device
JPS5362481A (en) Production of semiconductor device
JPS5333057A (en) Bump type semiconductor device
JPS5324268A (en) Pro duction of semiconductor device and bonding wire for the same
JPS5372567A (en) Semiconductor device
JPS5345969A (en) Schottky barrier semiconductor device
JPS52150965A (en) Semiconductor device
JPS5322366A (en) Electronic part
JPS5389656A (en) Production of semiconductor device