JPS556839A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS556839A
JPS556839A JP7897178A JP7897178A JPS556839A JP S556839 A JPS556839 A JP S556839A JP 7897178 A JP7897178 A JP 7897178A JP 7897178 A JP7897178 A JP 7897178A JP S556839 A JPS556839 A JP S556839A
Authority
JP
Japan
Prior art keywords
automatic die
substrate
gold
coating
high speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7897178A
Other languages
Japanese (ja)
Inventor
Hiroshi Koshimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7897178A priority Critical patent/JPS556839A/en
Publication of JPS556839A publication Critical patent/JPS556839A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE: To make possible high speed automatic die bonding by coating the back of the semiconductor substrate with a low melting point metal layer.
CONSTITUTION: The back of a silicone substrate 1 is coated with a titanium layer 4 and a gold-tin alloy metal 5 by means of a magnetron-spatting device for instance. A chip thus formed is press-bonded at a given place plated with gold in a semiconductor vessel 8 made of ceramic or the like by means of an automatic die bonder under the pressure of 50g, at 300°C for 2 sec. With such an arrangement, only the addition of the process for coating the substrate with a metal layer enables a high speed automatic die bonding without damage to the appearance.
COPYRIGHT: (C)1980,JPO&Japio
JP7897178A 1978-06-28 1978-06-28 Semiconductor device Pending JPS556839A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7897178A JPS556839A (en) 1978-06-28 1978-06-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7897178A JPS556839A (en) 1978-06-28 1978-06-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS556839A true JPS556839A (en) 1980-01-18

Family

ID=13676778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7897178A Pending JPS556839A (en) 1978-06-28 1978-06-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS556839A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999004423A1 (en) * 1997-07-14 1999-01-28 Infineon Technologies Ag Method and device for producing a chip-substrate assembly
JP2007528601A (en) * 2004-03-09 2007-10-11 インフィネオン テクノロジーズ アクチエンゲゼルシャフト Reliable, cost effective and thermally strong AuSn die attach technology

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940065A (en) * 1972-08-17 1974-04-15
JPS52147064A (en) * 1976-06-01 1977-12-07 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940065A (en) * 1972-08-17 1974-04-15
JPS52147064A (en) * 1976-06-01 1977-12-07 Mitsubishi Electric Corp Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999004423A1 (en) * 1997-07-14 1999-01-28 Infineon Technologies Ag Method and device for producing a chip-substrate assembly
GB2343551A (en) * 1997-07-14 2000-05-10 Infineon Technologies Ag Method and device for producing a chip-substrate assembly
GB2343551B (en) * 1997-07-14 2002-10-30 Infineon Technologies Ag Method and product for producing a chip-substrate connection
US7442582B2 (en) 1997-07-14 2008-10-28 Infineon Technologies Ag Method for producing a chip-substrate connection
JP2007528601A (en) * 2004-03-09 2007-10-11 インフィネオン テクノロジーズ アクチエンゲゼルシャフト Reliable, cost effective and thermally strong AuSn die attach technology
JP4700681B2 (en) * 2004-03-09 2011-06-15 インフィネオン テクノロジーズ アクチエンゲゼルシャフト Si circuit die, method of manufacturing Si circuit die, method of attaching Si circuit die to heat sink, circuit package and power module

Similar Documents

Publication Publication Date Title
WO1989006442A1 (en) Semiconductor package
JPS556839A (en) Semiconductor device
JPS5389368A (en) Production of semiconductor integrated circuit
EP0344504A3 (en) Article comprising a polyimide and a metal layer and methods of making such articles
JPS5321570A (en) Bonding method of semiconductor substrates
JPS54102971A (en) Semiconductor device
JPS54102969A (en) Semiconductor device
JPS5324268A (en) Pro duction of semiconductor device and bonding wire for the same
JPS54160166A (en) Electrode forming method for semiconductor device
JPS5518021A (en) Method of die bonding of semiconductor pellet
JPS54145476A (en) Package for semiconductor
JPS5469961A (en) Production of semiconductor device
JPS6417451A (en) Semiconductor device
JPS52149174A (en) Pressure converter
JPS5571041A (en) Semiconductor device
JPS53126266A (en) Metal coupling structuring body of semiconductor devices
JPS55103742A (en) Fabrication of electrode of semiconductor element
JPS5483767A (en) Semiconductor device
JPS5313875A (en) Semiconductor device
JPS5588324A (en) Manufacture of semiconductor ohmic layer
JPS5460859A (en) Bonding method
JPS544067A (en) Electrode forming method of semiconductor device
JPS5574146A (en) Production of high power semiconductor device
JPS54150974A (en) Manufacture of semiconductor device
JPS54147781A (en) Manufacture for compound semicondutor device