JPS53128285A - Semiconductor device and production of the same - Google Patents
Semiconductor device and production of the sameInfo
- Publication number
- JPS53128285A JPS53128285A JP4325677A JP4325677A JPS53128285A JP S53128285 A JPS53128285 A JP S53128285A JP 4325677 A JP4325677 A JP 4325677A JP 4325677 A JP4325677 A JP 4325677A JP S53128285 A JPS53128285 A JP S53128285A
- Authority
- JP
- Japan
- Prior art keywords
- production
- same
- semiconductor device
- substrate
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To make circuit elements in single crystal Si by thermobonding a substrate having single crystal Si to other substrate through an insulation film.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4325677A JPS53128285A (en) | 1977-04-14 | 1977-04-14 | Semiconductor device and production of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4325677A JPS53128285A (en) | 1977-04-14 | 1977-04-14 | Semiconductor device and production of the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53128285A true JPS53128285A (en) | 1978-11-09 |
Family
ID=12658772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4325677A Pending JPS53128285A (en) | 1977-04-14 | 1977-04-14 | Semiconductor device and production of the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53128285A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58175833A (en) * | 1982-04-08 | 1983-10-15 | Asahi Chem Ind Co Ltd | Manufacture of compound semiconductor thin-film structure |
JPS61174661A (en) * | 1985-01-29 | 1986-08-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor integrated circuit device and manufacture thereof |
JPS61220456A (en) * | 1985-03-27 | 1986-09-30 | Toshiba Corp | Manufacture of semiconductor substrate |
JPS62105448A (en) * | 1985-11-01 | 1987-05-15 | Nec Corp | Semiconductor device and manufacture thereof |
JPS6477951A (en) * | 1987-09-19 | 1989-03-23 | Fujitsu Ltd | Semiconductor substrate and manufacture thereof |
JPH03129765A (en) * | 1989-07-10 | 1991-06-03 | Nippondenso Co Ltd | Semiconductor device and manufacture thereof |
-
1977
- 1977-04-14 JP JP4325677A patent/JPS53128285A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58175833A (en) * | 1982-04-08 | 1983-10-15 | Asahi Chem Ind Co Ltd | Manufacture of compound semiconductor thin-film structure |
JPS61174661A (en) * | 1985-01-29 | 1986-08-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor integrated circuit device and manufacture thereof |
JPS61220456A (en) * | 1985-03-27 | 1986-09-30 | Toshiba Corp | Manufacture of semiconductor substrate |
JPH0340512B2 (en) * | 1985-03-27 | 1991-06-19 | ||
JPS62105448A (en) * | 1985-11-01 | 1987-05-15 | Nec Corp | Semiconductor device and manufacture thereof |
JPS6477951A (en) * | 1987-09-19 | 1989-03-23 | Fujitsu Ltd | Semiconductor substrate and manufacture thereof |
JPH03129765A (en) * | 1989-07-10 | 1991-06-03 | Nippondenso Co Ltd | Semiconductor device and manufacture thereof |
JPH0824162B2 (en) * | 1989-07-10 | 1996-03-06 | 日本電装株式会社 | Semiconductor device and manufacturing method thereof |
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