JPS6415966A - Storage device - Google Patents
Storage deviceInfo
- Publication number
- JPS6415966A JPS6415966A JP62171221A JP17122187A JPS6415966A JP S6415966 A JPS6415966 A JP S6415966A JP 62171221 A JP62171221 A JP 62171221A JP 17122187 A JP17122187 A JP 17122187A JP S6415966 A JPS6415966 A JP S6415966A
- Authority
- JP
- Japan
- Prior art keywords
- type
- polysilicon layer
- layer
- electrodes
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To obtain a dielectric breakdown type memory suitable for miniaturization in which a selecting transistor is not used, by forming a memory cell array by arranging memory cells on a plurality of substrates, and connecting first electrodes in one direction, and connecting second electrodes in another direction. CONSTITUTION:By ion-implantation of boron, a P-type layer 28 (a first electrode) is formed, which is shaped in a stripe type in the Y-direction to constitutes Y-direction control lines Y1, Y2,.... A polysilicon layer 30 is deposited, which is doped with phosphorus. A silicon nitride film 31 is formed, and subjected to stripe-type patterning in the X-direction to form a second electrode which is used as an X-direction control line. A silicon nitride film as well as a silicon oxide film 29 is applied to an insulating thin film. A wiring voltage of 16V is applied to the p-type layer, and 0V is applied to the n<+> polysilicon layer. These correspond to the forward bias relation for the p-type layer and the n<+> polysilicon layer, and induce local dielectric breakdown in the insulating thin film.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62171221A JP2618898B2 (en) | 1987-07-10 | 1987-07-10 | Storage device |
KR1019880008519A KR920001639B1 (en) | 1987-07-10 | 1988-07-09 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62171221A JP2618898B2 (en) | 1987-07-10 | 1987-07-10 | Storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6415966A true JPS6415966A (en) | 1989-01-19 |
JP2618898B2 JP2618898B2 (en) | 1997-06-11 |
Family
ID=15919288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62171221A Expired - Lifetime JP2618898B2 (en) | 1987-07-10 | 1987-07-10 | Storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2618898B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06209082A (en) * | 1992-11-20 | 1994-07-26 | Philips Electron Nv | Semiconductor device provided with programmable element |
JPH06236970A (en) * | 1992-11-20 | 1994-08-23 | Philips Electron Nv | Semiconductor device provided with large number of programmable element |
JP2008541493A (en) * | 2005-05-25 | 2008-11-20 | スパンジョン・リミテッド・ライアビリティ・カンパニー | Read-only memory array programmable by dielectric breakdown |
CN103085210A (en) * | 2013-02-16 | 2013-05-08 | 长春富维—江森自控汽车饰件系统有限公司 | Local temperature compensation system of slush molding die preheating furnace |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5387188A (en) * | 1977-01-11 | 1978-08-01 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
JPS60136099A (en) * | 1983-12-23 | 1985-07-19 | Fujitsu Ltd | Programmable read-only memory |
JPS61287260A (en) * | 1985-06-14 | 1986-12-17 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1987
- 1987-07-10 JP JP62171221A patent/JP2618898B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5387188A (en) * | 1977-01-11 | 1978-08-01 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
JPS60136099A (en) * | 1983-12-23 | 1985-07-19 | Fujitsu Ltd | Programmable read-only memory |
JPS61287260A (en) * | 1985-06-14 | 1986-12-17 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06209082A (en) * | 1992-11-20 | 1994-07-26 | Philips Electron Nv | Semiconductor device provided with programmable element |
JPH06236970A (en) * | 1992-11-20 | 1994-08-23 | Philips Electron Nv | Semiconductor device provided with large number of programmable element |
JP2008541493A (en) * | 2005-05-25 | 2008-11-20 | スパンジョン・リミテッド・ライアビリティ・カンパニー | Read-only memory array programmable by dielectric breakdown |
CN103085210A (en) * | 2013-02-16 | 2013-05-08 | 长春富维—江森自控汽车饰件系统有限公司 | Local temperature compensation system of slush molding die preheating furnace |
Also Published As
Publication number | Publication date |
---|---|
JP2618898B2 (en) | 1997-06-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080311 Year of fee payment: 11 |