JPS6415966A - Storage device - Google Patents

Storage device

Info

Publication number
JPS6415966A
JPS6415966A JP62171221A JP17122187A JPS6415966A JP S6415966 A JPS6415966 A JP S6415966A JP 62171221 A JP62171221 A JP 62171221A JP 17122187 A JP17122187 A JP 17122187A JP S6415966 A JPS6415966 A JP S6415966A
Authority
JP
Japan
Prior art keywords
type
polysilicon layer
layer
electrodes
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62171221A
Other languages
Japanese (ja)
Other versions
JP2618898B2 (en
Inventor
Ryohei Kirisawa
Riichiro Shirata
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62171221A priority Critical patent/JP2618898B2/en
Priority to KR1019880008519A priority patent/KR920001639B1/en
Publication of JPS6415966A publication Critical patent/JPS6415966A/en
Application granted granted Critical
Publication of JP2618898B2 publication Critical patent/JP2618898B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a dielectric breakdown type memory suitable for miniaturization in which a selecting transistor is not used, by forming a memory cell array by arranging memory cells on a plurality of substrates, and connecting first electrodes in one direction, and connecting second electrodes in another direction. CONSTITUTION:By ion-implantation of boron, a P-type layer 28 (a first electrode) is formed, which is shaped in a stripe type in the Y-direction to constitutes Y-direction control lines Y1, Y2,.... A polysilicon layer 30 is deposited, which is doped with phosphorus. A silicon nitride film 31 is formed, and subjected to stripe-type patterning in the X-direction to form a second electrode which is used as an X-direction control line. A silicon nitride film as well as a silicon oxide film 29 is applied to an insulating thin film. A wiring voltage of 16V is applied to the p-type layer, and 0V is applied to the n<+> polysilicon layer. These correspond to the forward bias relation for the p-type layer and the n<+> polysilicon layer, and induce local dielectric breakdown in the insulating thin film.
JP62171221A 1987-07-10 1987-07-10 Storage device Expired - Lifetime JP2618898B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62171221A JP2618898B2 (en) 1987-07-10 1987-07-10 Storage device
KR1019880008519A KR920001639B1 (en) 1987-07-10 1988-07-09 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62171221A JP2618898B2 (en) 1987-07-10 1987-07-10 Storage device

Publications (2)

Publication Number Publication Date
JPS6415966A true JPS6415966A (en) 1989-01-19
JP2618898B2 JP2618898B2 (en) 1997-06-11

Family

ID=15919288

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62171221A Expired - Lifetime JP2618898B2 (en) 1987-07-10 1987-07-10 Storage device

Country Status (1)

Country Link
JP (1) JP2618898B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06209082A (en) * 1992-11-20 1994-07-26 Philips Electron Nv Semiconductor device provided with programmable element
JPH06236970A (en) * 1992-11-20 1994-08-23 Philips Electron Nv Semiconductor device provided with large number of programmable element
JP2008541493A (en) * 2005-05-25 2008-11-20 スパンジョン・リミテッド・ライアビリティ・カンパニー Read-only memory array programmable by dielectric breakdown
CN103085210A (en) * 2013-02-16 2013-05-08 长春富维—江森自控汽车饰件系统有限公司 Local temperature compensation system of slush molding die preheating furnace

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5387188A (en) * 1977-01-11 1978-08-01 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS60136099A (en) * 1983-12-23 1985-07-19 Fujitsu Ltd Programmable read-only memory
JPS61287260A (en) * 1985-06-14 1986-12-17 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5387188A (en) * 1977-01-11 1978-08-01 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS60136099A (en) * 1983-12-23 1985-07-19 Fujitsu Ltd Programmable read-only memory
JPS61287260A (en) * 1985-06-14 1986-12-17 Fujitsu Ltd Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06209082A (en) * 1992-11-20 1994-07-26 Philips Electron Nv Semiconductor device provided with programmable element
JPH06236970A (en) * 1992-11-20 1994-08-23 Philips Electron Nv Semiconductor device provided with large number of programmable element
JP2008541493A (en) * 2005-05-25 2008-11-20 スパンジョン・リミテッド・ライアビリティ・カンパニー Read-only memory array programmable by dielectric breakdown
CN103085210A (en) * 2013-02-16 2013-05-08 长春富维—江森自控汽车饰件系统有限公司 Local temperature compensation system of slush molding die preheating furnace

Also Published As

Publication number Publication date
JP2618898B2 (en) 1997-06-11

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