JPS53104156A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS53104156A JPS53104156A JP1819277A JP1819277A JPS53104156A JP S53104156 A JPS53104156 A JP S53104156A JP 1819277 A JP1819277 A JP 1819277A JP 1819277 A JP1819277 A JP 1819277A JP S53104156 A JPS53104156 A JP S53104156A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- sunk
- polarity
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To form the multiple layer type Si layer in which the polarity and specific resistance are rapidly changed, by single crystallizing the amorphous Si sunk on the surface of Si substrate.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1819277A JPS53104156A (en) | 1977-02-23 | 1977-02-23 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1819277A JPS53104156A (en) | 1977-02-23 | 1977-02-23 | Manufacture for semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53104156A true JPS53104156A (en) | 1978-09-11 |
JPS62570B2 JPS62570B2 (en) | 1987-01-08 |
Family
ID=11964751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1819277A Granted JPS53104156A (en) | 1977-02-23 | 1977-02-23 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53104156A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57118648A (en) * | 1981-01-16 | 1982-07-23 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS59213135A (en) * | 1983-05-19 | 1984-12-03 | Agency Of Ind Science & Technol | Fine processing for semiconductor |
US4968635A (en) * | 1987-09-18 | 1990-11-06 | Kabushiki Kasiha Toshiba | Method of forming emitter of a bipolar transistor in monocrystallized film |
US5374564A (en) * | 1991-09-18 | 1994-12-20 | Commissariat A L'energie Atomique | Process for the production of thin semiconductor material films |
US6225192B1 (en) | 1996-05-15 | 2001-05-01 | Commissariat A L'energie Atomique | Method of producing a thin layer of semiconductor material |
US6790747B2 (en) | 1997-05-12 | 2004-09-14 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US7713369B2 (en) | 2001-04-13 | 2010-05-11 | Commissariat A L'energie Atomique | Detachable substrate or detachable structure and method for the production thereof |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
JP2014143277A (en) * | 2013-01-23 | 2014-08-07 | Toyota Motor Corp | Semiconductor device |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
-
1977
- 1977-02-23 JP JP1819277A patent/JPS53104156A/en active Granted
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57118648A (en) * | 1981-01-16 | 1982-07-23 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPH0154856B2 (en) * | 1981-01-16 | 1989-11-21 | Matsushita Electronics Corp | |
JPS59213135A (en) * | 1983-05-19 | 1984-12-03 | Agency Of Ind Science & Technol | Fine processing for semiconductor |
JPH0155574B2 (en) * | 1983-05-19 | 1989-11-27 | Kogyo Gijutsuin | |
US4968635A (en) * | 1987-09-18 | 1990-11-06 | Kabushiki Kasiha Toshiba | Method of forming emitter of a bipolar transistor in monocrystallized film |
USRE39484E1 (en) * | 1991-09-18 | 2007-02-06 | Commissariat A L'energie Atomique | Process for the production of thin semiconductor material films |
US5374564A (en) * | 1991-09-18 | 1994-12-20 | Commissariat A L'energie Atomique | Process for the production of thin semiconductor material films |
US6225192B1 (en) | 1996-05-15 | 2001-05-01 | Commissariat A L'energie Atomique | Method of producing a thin layer of semiconductor material |
US6809009B2 (en) | 1996-05-15 | 2004-10-26 | Commissariat A L'energie Atomique | Method of producing a thin layer of semiconductor material |
US7067396B2 (en) | 1996-05-15 | 2006-06-27 | Commissariat A L'energie Atomique | Method of producing a thin layer of semiconductor material |
US7498234B2 (en) | 1996-05-15 | 2009-03-03 | Commissariat A L'energie Atomique | Method of producing a thin layer of semiconductor material |
US6790747B2 (en) | 1997-05-12 | 2004-09-14 | Silicon Genesis Corporation | Method and device for controlled cleaving process |
US7713369B2 (en) | 2001-04-13 | 2010-05-11 | Commissariat A L'energie Atomique | Detachable substrate or detachable structure and method for the production thereof |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US9356181B2 (en) | 2006-09-08 | 2016-05-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US9640711B2 (en) | 2006-09-08 | 2017-05-02 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US11444221B2 (en) | 2008-05-07 | 2022-09-13 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
US8389385B2 (en) | 2009-02-04 | 2013-03-05 | Micron Technology, Inc. | Semiconductor material manufacture |
JP2014143277A (en) * | 2013-01-23 | 2014-08-07 | Toyota Motor Corp | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS62570B2 (en) | 1987-01-08 |
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