JPS5231665A - Growing method of semiconductor crystal - Google Patents

Growing method of semiconductor crystal

Info

Publication number
JPS5231665A
JPS5231665A JP10693175A JP10693175A JPS5231665A JP S5231665 A JPS5231665 A JP S5231665A JP 10693175 A JP10693175 A JP 10693175A JP 10693175 A JP10693175 A JP 10693175A JP S5231665 A JPS5231665 A JP S5231665A
Authority
JP
Japan
Prior art keywords
semiconductor crystal
growing method
thin layer
srystal
contacting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10693175A
Other languages
Japanese (ja)
Inventor
Tetsuo Asano
Konen Doi
Masatoshi Utaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10693175A priority Critical patent/JPS5231665A/en
Publication of JPS5231665A publication Critical patent/JPS5231665A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a multilayer semiconductor crystal which continuously possesses the good surface, by means of selecting the thickness of thin layer and cooling speed, as specified by contacting the srystal on the surface of liquid surface being converted into thin layer.
COPYRIGHT: (C)1977,JPO&Japio
JP10693175A 1975-09-05 1975-09-05 Growing method of semiconductor crystal Pending JPS5231665A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10693175A JPS5231665A (en) 1975-09-05 1975-09-05 Growing method of semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10693175A JPS5231665A (en) 1975-09-05 1975-09-05 Growing method of semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS5231665A true JPS5231665A (en) 1977-03-10

Family

ID=14446136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10693175A Pending JPS5231665A (en) 1975-09-05 1975-09-05 Growing method of semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS5231665A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5252461U (en) * 1975-10-09 1977-04-14
JPS62176985A (en) * 1986-01-27 1987-08-03 Hitachi Cable Ltd Liquid phase epitaxy

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5252461U (en) * 1975-10-09 1977-04-14
JPS5515316Y2 (en) * 1975-10-09 1980-04-09
JPS62176985A (en) * 1986-01-27 1987-08-03 Hitachi Cable Ltd Liquid phase epitaxy

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