JPS5231665A - Growing method of semiconductor crystal - Google Patents
Growing method of semiconductor crystalInfo
- Publication number
- JPS5231665A JPS5231665A JP10693175A JP10693175A JPS5231665A JP S5231665 A JPS5231665 A JP S5231665A JP 10693175 A JP10693175 A JP 10693175A JP 10693175 A JP10693175 A JP 10693175A JP S5231665 A JPS5231665 A JP S5231665A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor crystal
- growing method
- thin layer
- srystal
- contacting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a multilayer semiconductor crystal which continuously possesses the good surface, by means of selecting the thickness of thin layer and cooling speed, as specified by contacting the srystal on the surface of liquid surface being converted into thin layer.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10693175A JPS5231665A (en) | 1975-09-05 | 1975-09-05 | Growing method of semiconductor crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10693175A JPS5231665A (en) | 1975-09-05 | 1975-09-05 | Growing method of semiconductor crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5231665A true JPS5231665A (en) | 1977-03-10 |
Family
ID=14446136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10693175A Pending JPS5231665A (en) | 1975-09-05 | 1975-09-05 | Growing method of semiconductor crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5231665A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5252461U (en) * | 1975-10-09 | 1977-04-14 | ||
JPS62176985A (en) * | 1986-01-27 | 1987-08-03 | Hitachi Cable Ltd | Liquid phase epitaxy |
-
1975
- 1975-09-05 JP JP10693175A patent/JPS5231665A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5252461U (en) * | 1975-10-09 | 1977-04-14 | ||
JPS5515316Y2 (en) * | 1975-10-09 | 1980-04-09 | ||
JPS62176985A (en) * | 1986-01-27 | 1987-08-03 | Hitachi Cable Ltd | Liquid phase epitaxy |
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