JPS5258363A - Formation of semiconductor layer - Google Patents
Formation of semiconductor layerInfo
- Publication number
- JPS5258363A JPS5258363A JP13402975A JP13402975A JPS5258363A JP S5258363 A JPS5258363 A JP S5258363A JP 13402975 A JP13402975 A JP 13402975A JP 13402975 A JP13402975 A JP 13402975A JP S5258363 A JPS5258363 A JP S5258363A
- Authority
- JP
- Japan
- Prior art keywords
- formation
- semiconductor layer
- substrate
- semiconductor layers
- bottom surfaces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent warpage of substrate by growing semiconductor layers on the top and bottom surfaces of the substrate crystal.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13402975A JPS5258363A (en) | 1975-11-10 | 1975-11-10 | Formation of semiconductor layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13402975A JPS5258363A (en) | 1975-11-10 | 1975-11-10 | Formation of semiconductor layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5258363A true JPS5258363A (en) | 1977-05-13 |
Family
ID=15118702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13402975A Pending JPS5258363A (en) | 1975-11-10 | 1975-11-10 | Formation of semiconductor layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5258363A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62101024A (en) * | 1985-10-28 | 1987-05-11 | Sumitomo Electric Ind Ltd | Epitaxial-growth wafer |
US5578521A (en) * | 1986-11-20 | 1996-11-26 | Nippondenso Co., Ltd. | Semiconductor device with vaporphase grown epitaxial |
JP2010278364A (en) * | 2009-05-29 | 2010-12-09 | Furukawa Electric Co Ltd:The | Semiconductor device |
-
1975
- 1975-11-10 JP JP13402975A patent/JPS5258363A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62101024A (en) * | 1985-10-28 | 1987-05-11 | Sumitomo Electric Ind Ltd | Epitaxial-growth wafer |
US5578521A (en) * | 1986-11-20 | 1996-11-26 | Nippondenso Co., Ltd. | Semiconductor device with vaporphase grown epitaxial |
JP2010278364A (en) * | 2009-05-29 | 2010-12-09 | Furukawa Electric Co Ltd:The | Semiconductor device |
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