JPS5258363A - Formation of semiconductor layer - Google Patents

Formation of semiconductor layer

Info

Publication number
JPS5258363A
JPS5258363A JP13402975A JP13402975A JPS5258363A JP S5258363 A JPS5258363 A JP S5258363A JP 13402975 A JP13402975 A JP 13402975A JP 13402975 A JP13402975 A JP 13402975A JP S5258363 A JPS5258363 A JP S5258363A
Authority
JP
Japan
Prior art keywords
formation
semiconductor layer
substrate
semiconductor layers
bottom surfaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13402975A
Other languages
Japanese (ja)
Inventor
Toshimitsu Shinoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13402975A priority Critical patent/JPS5258363A/en
Publication of JPS5258363A publication Critical patent/JPS5258363A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent warpage of substrate by growing semiconductor layers on the top and bottom surfaces of the substrate crystal.
COPYRIGHT: (C)1977,JPO&Japio
JP13402975A 1975-11-10 1975-11-10 Formation of semiconductor layer Pending JPS5258363A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13402975A JPS5258363A (en) 1975-11-10 1975-11-10 Formation of semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13402975A JPS5258363A (en) 1975-11-10 1975-11-10 Formation of semiconductor layer

Publications (1)

Publication Number Publication Date
JPS5258363A true JPS5258363A (en) 1977-05-13

Family

ID=15118702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13402975A Pending JPS5258363A (en) 1975-11-10 1975-11-10 Formation of semiconductor layer

Country Status (1)

Country Link
JP (1) JPS5258363A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62101024A (en) * 1985-10-28 1987-05-11 Sumitomo Electric Ind Ltd Epitaxial-growth wafer
US5578521A (en) * 1986-11-20 1996-11-26 Nippondenso Co., Ltd. Semiconductor device with vaporphase grown epitaxial
JP2010278364A (en) * 2009-05-29 2010-12-09 Furukawa Electric Co Ltd:The Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62101024A (en) * 1985-10-28 1987-05-11 Sumitomo Electric Ind Ltd Epitaxial-growth wafer
US5578521A (en) * 1986-11-20 1996-11-26 Nippondenso Co., Ltd. Semiconductor device with vaporphase grown epitaxial
JP2010278364A (en) * 2009-05-29 2010-12-09 Furukawa Electric Co Ltd:The Semiconductor device

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