JPS51135464A - Semi-conductor crystal producing system - Google Patents
Semi-conductor crystal producing systemInfo
- Publication number
- JPS51135464A JPS51135464A JP6035075A JP6035075A JPS51135464A JP S51135464 A JPS51135464 A JP S51135464A JP 6035075 A JP6035075 A JP 6035075A JP 6035075 A JP6035075 A JP 6035075A JP S51135464 A JPS51135464 A JP S51135464A
- Authority
- JP
- Japan
- Prior art keywords
- semi
- producing system
- conductor crystal
- crystal producing
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: Prevention of the cavities generated in the substrate mateial by laminating the InGaSb compound semi-conductor crystal layer epitaxially on the InGaSb compound semi-conductor substrate.
COPYRIGHT: (C)1976,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6035075A JPS51135464A (en) | 1975-05-20 | 1975-05-20 | Semi-conductor crystal producing system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6035075A JPS51135464A (en) | 1975-05-20 | 1975-05-20 | Semi-conductor crystal producing system |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS51135464A true JPS51135464A (en) | 1976-11-24 |
Family
ID=13139611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6035075A Pending JPS51135464A (en) | 1975-05-20 | 1975-05-20 | Semi-conductor crystal producing system |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS51135464A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014201464A (en) * | 2013-04-02 | 2014-10-27 | 日本電信電話株式会社 | METHOD FOR FORMING InGaSb THIN FILM ON SILICON SUBSTRATE |
-
1975
- 1975-05-20 JP JP6035075A patent/JPS51135464A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014201464A (en) * | 2013-04-02 | 2014-10-27 | 日本電信電話株式会社 | METHOD FOR FORMING InGaSb THIN FILM ON SILICON SUBSTRATE |
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