JPS51135464A - Semi-conductor crystal producing system - Google Patents

Semi-conductor crystal producing system

Info

Publication number
JPS51135464A
JPS51135464A JP6035075A JP6035075A JPS51135464A JP S51135464 A JPS51135464 A JP S51135464A JP 6035075 A JP6035075 A JP 6035075A JP 6035075 A JP6035075 A JP 6035075A JP S51135464 A JPS51135464 A JP S51135464A
Authority
JP
Japan
Prior art keywords
semi
producing system
conductor crystal
crystal producing
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6035075A
Other languages
Japanese (ja)
Inventor
Kazuaki Segawa
Hidejiro Miki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP6035075A priority Critical patent/JPS51135464A/en
Publication of JPS51135464A publication Critical patent/JPS51135464A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: Prevention of the cavities generated in the substrate mateial by laminating the InGaSb compound semi-conductor crystal layer epitaxially on the InGaSb compound semi-conductor substrate.
COPYRIGHT: (C)1976,JPO&Japio
JP6035075A 1975-05-20 1975-05-20 Semi-conductor crystal producing system Pending JPS51135464A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6035075A JPS51135464A (en) 1975-05-20 1975-05-20 Semi-conductor crystal producing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6035075A JPS51135464A (en) 1975-05-20 1975-05-20 Semi-conductor crystal producing system

Publications (1)

Publication Number Publication Date
JPS51135464A true JPS51135464A (en) 1976-11-24

Family

ID=13139611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6035075A Pending JPS51135464A (en) 1975-05-20 1975-05-20 Semi-conductor crystal producing system

Country Status (1)

Country Link
JP (1) JPS51135464A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014201464A (en) * 2013-04-02 2014-10-27 日本電信電話株式会社 METHOD FOR FORMING InGaSb THIN FILM ON SILICON SUBSTRATE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014201464A (en) * 2013-04-02 2014-10-27 日本電信電話株式会社 METHOD FOR FORMING InGaSb THIN FILM ON SILICON SUBSTRATE

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