JPS5216972A - Epitachisial growing method of semic-conductor of iii-v family chemica l compound - Google Patents

Epitachisial growing method of semic-conductor of iii-v family chemica l compound

Info

Publication number
JPS5216972A
JPS5216972A JP9205975A JP9205975A JPS5216972A JP S5216972 A JPS5216972 A JP S5216972A JP 9205975 A JP9205975 A JP 9205975A JP 9205975 A JP9205975 A JP 9205975A JP S5216972 A JPS5216972 A JP S5216972A
Authority
JP
Japan
Prior art keywords
epitachisial
semic
chemica
family
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9205975A
Other languages
Japanese (ja)
Inventor
Yasutoshi Kurihara
Tadahiko Mitsuyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9205975A priority Critical patent/JPS5216972A/en
Publication of JPS5216972A publication Critical patent/JPS5216972A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

PURPOSE: To sufficiently thicken the epitachisial layer growing on the concave of the base plate through the reheating and recooling processes during growth of the liquid phase.
COPYRIGHT: (C)1977,JPO&Japio
JP9205975A 1975-07-30 1975-07-30 Epitachisial growing method of semic-conductor of iii-v family chemica l compound Pending JPS5216972A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9205975A JPS5216972A (en) 1975-07-30 1975-07-30 Epitachisial growing method of semic-conductor of iii-v family chemica l compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9205975A JPS5216972A (en) 1975-07-30 1975-07-30 Epitachisial growing method of semic-conductor of iii-v family chemica l compound

Publications (1)

Publication Number Publication Date
JPS5216972A true JPS5216972A (en) 1977-02-08

Family

ID=14043905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9205975A Pending JPS5216972A (en) 1975-07-30 1975-07-30 Epitachisial growing method of semic-conductor of iii-v family chemica l compound

Country Status (1)

Country Link
JP (1) JPS5216972A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5747863A (en) * 1980-09-03 1982-03-18 Hitachi Chem Co Ltd Manufacture of sensitizer for electroless copper plating

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5747863A (en) * 1980-09-03 1982-03-18 Hitachi Chem Co Ltd Manufacture of sensitizer for electroless copper plating
JPS5856030B2 (en) * 1980-09-03 1983-12-13 日立化成工業株式会社 Manufacturing method of sensitizer for electroless copper plating

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