JPS5277898A - Crystal growth of gallium arsenide from vapor phase - Google Patents

Crystal growth of gallium arsenide from vapor phase

Info

Publication number
JPS5277898A
JPS5277898A JP15330875A JP15330875A JPS5277898A JP S5277898 A JPS5277898 A JP S5277898A JP 15330875 A JP15330875 A JP 15330875A JP 15330875 A JP15330875 A JP 15330875A JP S5277898 A JPS5277898 A JP S5277898A
Authority
JP
Japan
Prior art keywords
gallium arsenide
vapor phase
crystal growth
working
quite easily
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15330875A
Other languages
Japanese (ja)
Inventor
Motonao Hirao
Takashi Kajimura
Masao Aoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15330875A priority Critical patent/JPS5277898A/en
Publication of JPS5277898A publication Critical patent/JPS5277898A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain gallium arsenide layer of high resistivity quite easily and that for working of high quality continuously.
COPYRIGHT: (C)1977,JPO&Japio
JP15330875A 1975-12-24 1975-12-24 Crystal growth of gallium arsenide from vapor phase Pending JPS5277898A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15330875A JPS5277898A (en) 1975-12-24 1975-12-24 Crystal growth of gallium arsenide from vapor phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15330875A JPS5277898A (en) 1975-12-24 1975-12-24 Crystal growth of gallium arsenide from vapor phase

Publications (1)

Publication Number Publication Date
JPS5277898A true JPS5277898A (en) 1977-06-30

Family

ID=15559632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15330875A Pending JPS5277898A (en) 1975-12-24 1975-12-24 Crystal growth of gallium arsenide from vapor phase

Country Status (1)

Country Link
JP (1) JPS5277898A (en)

Similar Documents

Publication Publication Date Title
JPS51111476A (en) Method of liquid phase epitaxial crystal growth
JPS5277898A (en) Crystal growth of gallium arsenide from vapor phase
JPS5333055A (en) Vapor phase growing apparatus of semiconductor crystals
JPS5249989A (en) Growth method of liquid phase epitaxial
JPS52117062A (en) Liquid phase epitaxial growth process
JPS5211860A (en) Liquid phase epitaxial device
JPS5216972A (en) Epitachisial growing method of semic-conductor of iii-v family chemica l compound
JPS53139970A (en) Liquid phase epitaxial growth method of gaas crystal
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS51140561A (en) Liquid phase epitaxial growing method
JPS51114383A (en) Liquid phase epitaxial crystal growth
JPS5230112A (en) Offset beat canceller
JPS51126037A (en) Semiconductor crystal growth method
JPS51144176A (en) Liquid phase epitaxial growth method
JPS5224166A (en) Process for growth of 3-dimensional compound crystal
JPS5228863A (en) Process for growing in liquid phase
JPS51145268A (en) Epitaxial semiconductor device
JPS51140887A (en) A liquid phase growth method
JPS5232669A (en) Liquid-phase epitaxial growth method
JPS5258461A (en) Liquid phase epitaxial device
JPS5244193A (en) Epitaxial growth method
JPS5370669A (en) Liquid phase epitaxial growth apparatus and method
JPS524482A (en) Liquid phase growth method
JPS5261958A (en) Method and device for liquid phase crystal crowth
JPS5255471A (en) Impurity doping method of gallium arsenide vapor growth crystal