JPS5333055A - Vapor phase growing apparatus of semiconductor crystals - Google Patents
Vapor phase growing apparatus of semiconductor crystalsInfo
- Publication number
- JPS5333055A JPS5333055A JP10729076A JP10729076A JPS5333055A JP S5333055 A JPS5333055 A JP S5333055A JP 10729076 A JP10729076 A JP 10729076A JP 10729076 A JP10729076 A JP 10729076A JP S5333055 A JPS5333055 A JP S5333055A
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- growing apparatus
- semiconductor crystals
- phase growing
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To form even growth films by sectioning a growth chamber and a source chamber to a plurality, rotating these relatively and shielding between both chambers over a specified rotating angle.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51107290A JPS5841657B2 (en) | 1976-09-09 | 1976-09-09 | Semiconductor crystal vapor phase growth equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51107290A JPS5841657B2 (en) | 1976-09-09 | 1976-09-09 | Semiconductor crystal vapor phase growth equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5333055A true JPS5333055A (en) | 1978-03-28 |
JPS5841657B2 JPS5841657B2 (en) | 1983-09-13 |
Family
ID=14455334
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51107290A Expired JPS5841657B2 (en) | 1976-09-09 | 1976-09-09 | Semiconductor crystal vapor phase growth equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5841657B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5591819A (en) * | 1978-12-28 | 1980-07-11 | Fujitsu Ltd | Vapor phase growth method |
JPS5710921A (en) * | 1980-06-23 | 1982-01-20 | Mitsubishi Electric Corp | Gas phase epitaxial growth device |
JPS5825223A (en) * | 1981-08-06 | 1983-02-15 | Nec Corp | Vapor growth unit for 3-5 compound semiconductor |
JPS6328031A (en) * | 1986-07-21 | 1988-02-05 | Matsushita Electric Ind Co Ltd | Vapor growth apparatus |
-
1976
- 1976-09-09 JP JP51107290A patent/JPS5841657B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5591819A (en) * | 1978-12-28 | 1980-07-11 | Fujitsu Ltd | Vapor phase growth method |
JPS6246975B2 (en) * | 1978-12-28 | 1987-10-06 | Fujitsu Ltd | |
JPS5710921A (en) * | 1980-06-23 | 1982-01-20 | Mitsubishi Electric Corp | Gas phase epitaxial growth device |
JPS5825223A (en) * | 1981-08-06 | 1983-02-15 | Nec Corp | Vapor growth unit for 3-5 compound semiconductor |
JPS6328031A (en) * | 1986-07-21 | 1988-02-05 | Matsushita Electric Ind Co Ltd | Vapor growth apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPS5841657B2 (en) | 1983-09-13 |
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