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Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
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Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP6631376ApriorityCriticalpatent/JPS52149476A/en
Publication of JPS52149476ApublicationCriticalpatent/JPS52149476A/en
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
(AREA)
Crystals, And After-Treatments Of Crystals
(AREA)
Abstract
PURPOSE: To eliminate residual solution on single crystal wafers and obtain goodquality liquid phase epitaxial grown layers by obliquely disposing single crystal wafer holding plates and arranging said plates so as to permit desired adjustment of their inclination angle.