JPS52109866A - Liquid epitaxial growing method - Google Patents
Liquid epitaxial growing methodInfo
- Publication number
- JPS52109866A JPS52109866A JP2561476A JP2561476A JPS52109866A JP S52109866 A JPS52109866 A JP S52109866A JP 2561476 A JP2561476 A JP 2561476A JP 2561476 A JP2561476 A JP 2561476A JP S52109866 A JPS52109866 A JP S52109866A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial
- growing method
- melt
- epitaxial growing
- liquid epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain the grown layer having good crystal performance and surface flatness, by arranging the semiconductor crystal plate as soluble melt source at the bottom of the melt, eliminating this immediately before the epitaxial grow, and growning for epitaxial immediately after the epitaxial grown by contacting the melt with the smiconductor wafer.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2561476A JPS52109866A (en) | 1976-03-11 | 1976-03-11 | Liquid epitaxial growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2561476A JPS52109866A (en) | 1976-03-11 | 1976-03-11 | Liquid epitaxial growing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52109866A true JPS52109866A (en) | 1977-09-14 |
JPS556286B2 JPS556286B2 (en) | 1980-02-15 |
Family
ID=12170753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2561476A Granted JPS52109866A (en) | 1976-03-11 | 1976-03-11 | Liquid epitaxial growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52109866A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1987002023A1 (en) * | 1985-10-04 | 1987-04-09 | Fuel Tech, Inc. | Reduction of nitrogen- and carbon-based pollutants |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3741825A (en) * | 1971-07-08 | 1973-06-26 | Rca Corp | Method of depositing an epitaxial semiconductor layer from the liquidphase |
JPS4932581A (en) * | 1972-07-22 | 1974-03-25 |
-
1976
- 1976-03-11 JP JP2561476A patent/JPS52109866A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3741825A (en) * | 1971-07-08 | 1973-06-26 | Rca Corp | Method of depositing an epitaxial semiconductor layer from the liquidphase |
JPS4932581A (en) * | 1972-07-22 | 1974-03-25 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1987002023A1 (en) * | 1985-10-04 | 1987-04-09 | Fuel Tech, Inc. | Reduction of nitrogen- and carbon-based pollutants |
Also Published As
Publication number | Publication date |
---|---|
JPS556286B2 (en) | 1980-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53126866A (en) | Production of semiconductor wafers | |
JPS52109866A (en) | Liquid epitaxial growing method | |
JPS53104162A (en) | Forming method for epitaxial layer on semiconductor wafer | |
JPS547861A (en) | Liquid phase epitaxial growth method | |
JPS5328374A (en) | Wafer production | |
JPS5286058A (en) | Liquid phase epitaxial growth | |
JPS51126047A (en) | Growth device for semi-conductor crystals | |
JPS5334465A (en) | Manufacture for semiconductor epitaxial grown layer | |
JPS5375176A (en) | Liquid phase epotaxial growth method of compound semiconductor | |
JPS52115171A (en) | Liquid phase epitaxial growing method | |
JPS51111057A (en) | Crystal growing device | |
JPS53144474A (en) | Apparatus for producing crystal semiconductor | |
JPS52155186A (en) | Liquid phase growth of iii-v group semiconductor | |
JPS5232669A (en) | Liquid-phase epitaxial growth method | |
JPS5361595A (en) | Liquid phase epitaxial growing method for gaas-algaas | |
JPS52146554A (en) | Multilayer epitaxial growth and its apparatus | |
JPS5384677A (en) | Liquid phase epitaxial growth method | |
JPS5436192A (en) | Manufacture for semiconductor | |
JPS542660A (en) | Liquid-phase epitaxial growth method of compound semiconductor | |
JPS5378766A (en) | Crystal growth device | |
JPS5244193A (en) | Epitaxial growth method | |
JPS5248483A (en) | Method for production of semiconductor crystal | |
JPS528769A (en) | Semiconductor device | |
JPS52114269A (en) | Selective liquid growing method | |
JPS51126039A (en) | Semiconductor possessing telted forbidden band through liquid phaseg rowth method |