JPS52109866A - Liquid epitaxial growing method - Google Patents

Liquid epitaxial growing method

Info

Publication number
JPS52109866A
JPS52109866A JP2561476A JP2561476A JPS52109866A JP S52109866 A JPS52109866 A JP S52109866A JP 2561476 A JP2561476 A JP 2561476A JP 2561476 A JP2561476 A JP 2561476A JP S52109866 A JPS52109866 A JP S52109866A
Authority
JP
Japan
Prior art keywords
epitaxial
growing method
melt
epitaxial growing
liquid epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2561476A
Other languages
Japanese (ja)
Other versions
JPS556286B2 (en
Inventor
Hiroshi Takano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP2561476A priority Critical patent/JPS52109866A/en
Publication of JPS52109866A publication Critical patent/JPS52109866A/en
Publication of JPS556286B2 publication Critical patent/JPS556286B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To obtain the grown layer having good crystal performance and surface flatness, by arranging the semiconductor crystal plate as soluble melt source at the bottom of the melt, eliminating this immediately before the epitaxial grow, and growning for epitaxial immediately after the epitaxial grown by contacting the melt with the smiconductor wafer.
COPYRIGHT: (C)1977,JPO&Japio
JP2561476A 1976-03-11 1976-03-11 Liquid epitaxial growing method Granted JPS52109866A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2561476A JPS52109866A (en) 1976-03-11 1976-03-11 Liquid epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2561476A JPS52109866A (en) 1976-03-11 1976-03-11 Liquid epitaxial growing method

Publications (2)

Publication Number Publication Date
JPS52109866A true JPS52109866A (en) 1977-09-14
JPS556286B2 JPS556286B2 (en) 1980-02-15

Family

ID=12170753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2561476A Granted JPS52109866A (en) 1976-03-11 1976-03-11 Liquid epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS52109866A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987002023A1 (en) * 1985-10-04 1987-04-09 Fuel Tech, Inc. Reduction of nitrogen- and carbon-based pollutants

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3741825A (en) * 1971-07-08 1973-06-26 Rca Corp Method of depositing an epitaxial semiconductor layer from the liquidphase
JPS4932581A (en) * 1972-07-22 1974-03-25

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3741825A (en) * 1971-07-08 1973-06-26 Rca Corp Method of depositing an epitaxial semiconductor layer from the liquidphase
JPS4932581A (en) * 1972-07-22 1974-03-25

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1987002023A1 (en) * 1985-10-04 1987-04-09 Fuel Tech, Inc. Reduction of nitrogen- and carbon-based pollutants

Also Published As

Publication number Publication date
JPS556286B2 (en) 1980-02-15

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