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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP12481375ApriorityCriticalpatent/JPS5248483A/en
Publication of JPS5248483ApublicationCriticalpatent/JPS5248483A/en
Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
(AREA)
Led Devices
(AREA)
Abstract
PURPOSE: To obtain a growth layer of good crystallizability by making the rate of cooling less than 0.125° C/minute in making liquid phase epitaxial growth of GaP crystal on a GaP crystal substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP12481375A1975-10-161975-10-16Method for production of semiconductor crystal
PendingJPS5248483A
(en)