JPS5210072A - Method for growing epitaxial crystal - Google Patents

Method for growing epitaxial crystal

Info

Publication number
JPS5210072A
JPS5210072A JP8653575A JP8653575A JPS5210072A JP S5210072 A JPS5210072 A JP S5210072A JP 8653575 A JP8653575 A JP 8653575A JP 8653575 A JP8653575 A JP 8653575A JP S5210072 A JPS5210072 A JP S5210072A
Authority
JP
Japan
Prior art keywords
epitaxial crystal
growing epitaxial
growing
eleaning
eliminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8653575A
Other languages
Japanese (ja)
Other versions
JPS5540174B2 (en
Inventor
Katsunobu Nakagawa
Yoshimi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP8653575A priority Critical patent/JPS5210072A/en
Publication of JPS5210072A publication Critical patent/JPS5210072A/en
Publication of JPS5540174B2 publication Critical patent/JPS5540174B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain a gas phase growth layer in which a stacking fault is eliminated, by executing eleaning of a substrate by chlorine gas in low-temperature.
COPYRIGHT: (C)1977,JPO&Japio
JP8653575A 1975-07-14 1975-07-14 Method for growing epitaxial crystal Granted JPS5210072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8653575A JPS5210072A (en) 1975-07-14 1975-07-14 Method for growing epitaxial crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8653575A JPS5210072A (en) 1975-07-14 1975-07-14 Method for growing epitaxial crystal

Publications (2)

Publication Number Publication Date
JPS5210072A true JPS5210072A (en) 1977-01-26
JPS5540174B2 JPS5540174B2 (en) 1980-10-16

Family

ID=13889684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8653575A Granted JPS5210072A (en) 1975-07-14 1975-07-14 Method for growing epitaxial crystal

Country Status (1)

Country Link
JP (1) JPS5210072A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196794A (en) * 1981-05-29 1982-12-02 Nec Corp Epitaxial growth method
US5670421A (en) * 1988-07-27 1997-09-23 Hitachi, Ltd. Process for forming multilayer wiring

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196794A (en) * 1981-05-29 1982-12-02 Nec Corp Epitaxial growth method
JPS6229398B2 (en) * 1981-05-29 1987-06-25 Nippon Electric Co
US5670421A (en) * 1988-07-27 1997-09-23 Hitachi, Ltd. Process for forming multilayer wiring

Also Published As

Publication number Publication date
JPS5540174B2 (en) 1980-10-16

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