JPS5210072A - Method for growing epitaxial crystal - Google Patents
Method for growing epitaxial crystalInfo
- Publication number
- JPS5210072A JPS5210072A JP8653575A JP8653575A JPS5210072A JP S5210072 A JPS5210072 A JP S5210072A JP 8653575 A JP8653575 A JP 8653575A JP 8653575 A JP8653575 A JP 8653575A JP S5210072 A JPS5210072 A JP S5210072A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial crystal
- growing epitaxial
- growing
- eleaning
- eliminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain a gas phase growth layer in which a stacking fault is eliminated, by executing eleaning of a substrate by chlorine gas in low-temperature.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8653575A JPS5210072A (en) | 1975-07-14 | 1975-07-14 | Method for growing epitaxial crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8653575A JPS5210072A (en) | 1975-07-14 | 1975-07-14 | Method for growing epitaxial crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5210072A true JPS5210072A (en) | 1977-01-26 |
JPS5540174B2 JPS5540174B2 (en) | 1980-10-16 |
Family
ID=13889684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8653575A Granted JPS5210072A (en) | 1975-07-14 | 1975-07-14 | Method for growing epitaxial crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5210072A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57196794A (en) * | 1981-05-29 | 1982-12-02 | Nec Corp | Epitaxial growth method |
US5670421A (en) * | 1988-07-27 | 1997-09-23 | Hitachi, Ltd. | Process for forming multilayer wiring |
-
1975
- 1975-07-14 JP JP8653575A patent/JPS5210072A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57196794A (en) * | 1981-05-29 | 1982-12-02 | Nec Corp | Epitaxial growth method |
JPS6229398B2 (en) * | 1981-05-29 | 1987-06-25 | Nippon Electric Co | |
US5670421A (en) * | 1988-07-27 | 1997-09-23 | Hitachi, Ltd. | Process for forming multilayer wiring |
Also Published As
Publication number | Publication date |
---|---|
JPS5540174B2 (en) | 1980-10-16 |
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