JPS5348669A - Growth method of semiconductor crystal - Google Patents

Growth method of semiconductor crystal

Info

Publication number
JPS5348669A
JPS5348669A JP12416576A JP12416576A JPS5348669A JP S5348669 A JPS5348669 A JP S5348669A JP 12416576 A JP12416576 A JP 12416576A JP 12416576 A JP12416576 A JP 12416576A JP S5348669 A JPS5348669 A JP S5348669A
Authority
JP
Japan
Prior art keywords
semiconductor crystal
growth method
solute
solvent
produce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12416576A
Other languages
Japanese (ja)
Inventor
Hirobumi Suga
Jun Ishii
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12416576A priority Critical patent/JPS5348669A/en
Publication of JPS5348669A publication Critical patent/JPS5348669A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To produce a semiconductor crystal of high purity similar to the one when there is least O2 in atmosphere gas by adding a solute of oxidizing power stronger than that of a solvent into a solution in performing epitaxial growth.
COPYRIGHT: (C)1978,JPO&Japio
JP12416576A 1976-10-15 1976-10-15 Growth method of semiconductor crystal Pending JPS5348669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12416576A JPS5348669A (en) 1976-10-15 1976-10-15 Growth method of semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12416576A JPS5348669A (en) 1976-10-15 1976-10-15 Growth method of semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS5348669A true JPS5348669A (en) 1978-05-02

Family

ID=14878545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12416576A Pending JPS5348669A (en) 1976-10-15 1976-10-15 Growth method of semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS5348669A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115877A (en) * 1981-12-28 1983-07-09 Sharp Corp Semiconductor laser element

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPAN.J.APPL.PHYS=1976 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58115877A (en) * 1981-12-28 1983-07-09 Sharp Corp Semiconductor laser element
JPS6124840B2 (en) * 1981-12-28 1986-06-12 Sharp Kk

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