JPS51126036A - Semi-conductor crystal growth method - Google Patents

Semi-conductor crystal growth method

Info

Publication number
JPS51126036A
JPS51126036A JP8429674A JP8429674A JPS51126036A JP S51126036 A JPS51126036 A JP S51126036A JP 8429674 A JP8429674 A JP 8429674A JP 8429674 A JP8429674 A JP 8429674A JP S51126036 A JPS51126036 A JP S51126036A
Authority
JP
Japan
Prior art keywords
crystal growth
semi
growth method
conductor crystal
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8429674A
Other languages
Japanese (ja)
Inventor
Koichi Dazai
Akihiro Shibatomi
Akira Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8429674A priority Critical patent/JPS51126036A/en
Publication of JPS51126036A publication Critical patent/JPS51126036A/en
Pending legal-status Critical Current

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Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: The chemical compounded semi-conductor manufacturing method to be able control properly the crystal growth without mixing unnecessary impurities.
COPYRIGHT: (C)1976,JPO&Japio
JP8429674A 1974-07-23 1974-07-23 Semi-conductor crystal growth method Pending JPS51126036A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8429674A JPS51126036A (en) 1974-07-23 1974-07-23 Semi-conductor crystal growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8429674A JPS51126036A (en) 1974-07-23 1974-07-23 Semi-conductor crystal growth method

Publications (1)

Publication Number Publication Date
JPS51126036A true JPS51126036A (en) 1976-11-02

Family

ID=13826495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8429674A Pending JPS51126036A (en) 1974-07-23 1974-07-23 Semi-conductor crystal growth method

Country Status (1)

Country Link
JP (1) JPS51126036A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5970314A (en) * 1996-03-25 1999-10-19 Sumitomo Electric Industries, Ltd. Process for vapor phase epitaxy of compound semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919765A (en) * 1972-04-29 1974-02-21

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919765A (en) * 1972-04-29 1974-02-21

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5970314A (en) * 1996-03-25 1999-10-19 Sumitomo Electric Industries, Ltd. Process for vapor phase epitaxy of compound semiconductor

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