JPS53104157A - Manufacture for polycrystal semiconductor film - Google Patents

Manufacture for polycrystal semiconductor film

Info

Publication number
JPS53104157A
JPS53104157A JP1957977A JP1957977A JPS53104157A JP S53104157 A JPS53104157 A JP S53104157A JP 1957977 A JP1957977 A JP 1957977A JP 1957977 A JP1957977 A JP 1957977A JP S53104157 A JPS53104157 A JP S53104157A
Authority
JP
Japan
Prior art keywords
semiconductor film
polycrystal semiconductor
manufacture
polycrystal
uniform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1957977A
Other languages
Japanese (ja)
Inventor
Katsumi Imaizumi
Akio Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1957977A priority Critical patent/JPS53104157A/en
Publication of JPS53104157A publication Critical patent/JPS53104157A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To form the polycrystal semiconductor film having the crystal particle diameter giant and uniform, by inserting uniform solid solution having the same constituent as the polycrystal semiconductor film between the polycrystal semiconductor film and the substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP1957977A 1977-02-22 1977-02-22 Manufacture for polycrystal semiconductor film Pending JPS53104157A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1957977A JPS53104157A (en) 1977-02-22 1977-02-22 Manufacture for polycrystal semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1957977A JPS53104157A (en) 1977-02-22 1977-02-22 Manufacture for polycrystal semiconductor film

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4246178A Division JPS5415688A (en) 1978-04-10 1978-04-10 Manufacture of solar battery

Publications (1)

Publication Number Publication Date
JPS53104157A true JPS53104157A (en) 1978-09-11

Family

ID=12003176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1957977A Pending JPS53104157A (en) 1977-02-22 1977-02-22 Manufacture for polycrystal semiconductor film

Country Status (1)

Country Link
JP (1) JPS53104157A (en)

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