JPS53145574A - Oxidation method of silicon wafers - Google Patents

Oxidation method of silicon wafers

Info

Publication number
JPS53145574A
JPS53145574A JP6142877A JP6142877A JPS53145574A JP S53145574 A JPS53145574 A JP S53145574A JP 6142877 A JP6142877 A JP 6142877A JP 6142877 A JP6142877 A JP 6142877A JP S53145574 A JPS53145574 A JP S53145574A
Authority
JP
Japan
Prior art keywords
silicon wafers
oxidation method
rate
mixing
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6142877A
Other languages
Japanese (ja)
Other versions
JPS5941301B2 (en
Inventor
Yasuaki Hokari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6142877A priority Critical patent/JPS5941301B2/en
Publication of JPS53145574A publication Critical patent/JPS53145574A/en
Publication of JPS5941301B2 publication Critical patent/JPS5941301B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To shorten required oxidation time while maintaining effect by increasing the rate of mixing of chlorine compound to oxygen as much as possible and changing the rate of mixing and the rate of oxide film forming.
COPYRIGHT: (C)1978,JPO&Japio
JP6142877A 1977-05-25 1977-05-25 Silicon wafer oxidation method Expired JPS5941301B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6142877A JPS5941301B2 (en) 1977-05-25 1977-05-25 Silicon wafer oxidation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6142877A JPS5941301B2 (en) 1977-05-25 1977-05-25 Silicon wafer oxidation method

Publications (2)

Publication Number Publication Date
JPS53145574A true JPS53145574A (en) 1978-12-18
JPS5941301B2 JPS5941301B2 (en) 1984-10-05

Family

ID=13170778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6142877A Expired JPS5941301B2 (en) 1977-05-25 1977-05-25 Silicon wafer oxidation method

Country Status (1)

Country Link
JP (1) JPS5941301B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091577A (en) * 1998-08-26 2000-03-31 Texas Instr Inc <Ti> Method of forming game oxide film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000091577A (en) * 1998-08-26 2000-03-31 Texas Instr Inc <Ti> Method of forming game oxide film

Also Published As

Publication number Publication date
JPS5941301B2 (en) 1984-10-05

Similar Documents

Publication Publication Date Title
JPS53145574A (en) Oxidation method of silicon wafers
JPS52100463A (en) Gamma-lactone and method of preparing same
JPS51147869A (en) Turn table equipment driven by linear motor
JPS5233624A (en) Preparation of leucylnitroagmatines
JPS5254084A (en) Manufacture of 2-gamma-glutamylamino-4-hexynic acid and/or 2-gamma-glutamylamino- 3-hydroxy-4-hexynic acid
JPS51125698A (en) The formation of silicon dioxide film
JPS5232675A (en) Etching solution for chemical compound
JPS5314571A (en) Etching method and mixed gas for etching
JPS52141565A (en) Manufacture of semiconductor unit
JPS52119192A (en) Semiconductor
JPS5242366A (en) Method of preventing occurence of crystal defects of silicon wafers
JPS51118369A (en) Manufacturing process for simiconduator unit
JPS5346937A (en) Preparation of n-p-aminobenzoyl-n,-p-aminourea
JPS5265298A (en) Synthesis of novel 2-substituted-thioadenosine-n-oxides
JPS5218834A (en) Long-acting perfumery composition
JPS51126036A (en) Semi-conductor crystal growth method
JPS51130700A (en) Method of producing silicon nitride solid solution powder
JPS5424575A (en) Handling method of wafer
JPS5231888A (en) Method of producing novel antibiotics, demethylblasticidin s
JPS5346955A (en) Polyoxypregnane type compound
JPS52118487A (en) Isotentoxin and method of preparing the same
JPS5314573A (en) Etching method and mixed gas for etching
JPS53112668A (en) Preparing method for oxide film
JPS5356640A (en) Novel antibiotics fortemycin d and process for preparation of the same
JPS5363362A (en) Preparation of 1-acetylaminotricyclo 4.3.1.1 2,5