JPS5314571A - Etching method and mixed gas for etching - Google Patents
Etching method and mixed gas for etchingInfo
- Publication number
- JPS5314571A JPS5314571A JP8939876A JP8939876A JPS5314571A JP S5314571 A JPS5314571 A JP S5314571A JP 8939876 A JP8939876 A JP 8939876A JP 8939876 A JP8939876 A JP 8939876A JP S5314571 A JPS5314571 A JP S5314571A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- mixed gas
- etching method
- gas
- mole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To improve plasma etching rate and prevent the degradation of organic resist materials by using the gas comprising mixing of 1 to 10 mole % of CO2 into halogen alone or its compound gas.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51089398A JPS6019139B2 (en) | 1976-07-26 | 1976-07-26 | Etching method and mixture gas for plasma etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51089398A JPS6019139B2 (en) | 1976-07-26 | 1976-07-26 | Etching method and mixture gas for plasma etching |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5314571A true JPS5314571A (en) | 1978-02-09 |
JPS6019139B2 JPS6019139B2 (en) | 1985-05-14 |
Family
ID=13969531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51089398A Expired JPS6019139B2 (en) | 1976-07-26 | 1976-07-26 | Etching method and mixture gas for plasma etching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6019139B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5752136A (en) * | 1980-07-11 | 1982-03-27 | Philips Nv | Method of producing semiconductor device |
US4381967A (en) * | 1980-07-11 | 1983-05-03 | U.S. Philips Corporation | Method of manufacturing a semiconductor device |
JPS61256638A (en) * | 1985-05-03 | 1986-11-14 | テキサス インスツルメンツ インコーポレイテッド | Patternization of thin film wiring layer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5122637A (en) * | 1974-08-20 | 1976-02-23 | Fujitsu Ltd | Kinzokuhimakuno etsuchinguhoho |
-
1976
- 1976-07-26 JP JP51089398A patent/JPS6019139B2/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5122637A (en) * | 1974-08-20 | 1976-02-23 | Fujitsu Ltd | Kinzokuhimakuno etsuchinguhoho |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5752136A (en) * | 1980-07-11 | 1982-03-27 | Philips Nv | Method of producing semiconductor device |
US4381967A (en) * | 1980-07-11 | 1983-05-03 | U.S. Philips Corporation | Method of manufacturing a semiconductor device |
JPH0237091B2 (en) * | 1980-07-11 | 1990-08-22 | Fuiritsupusu Furuuiranpenfuaburiken Nv | |
JPS61256638A (en) * | 1985-05-03 | 1986-11-14 | テキサス インスツルメンツ インコーポレイテッド | Patternization of thin film wiring layer |
Also Published As
Publication number | Publication date |
---|---|
JPS6019139B2 (en) | 1985-05-14 |
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