JPS52127167A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS52127167A JPS52127167A JP4364576A JP4364576A JPS52127167A JP S52127167 A JPS52127167 A JP S52127167A JP 4364576 A JP4364576 A JP 4364576A JP 4364576 A JP4364576 A JP 4364576A JP S52127167 A JPS52127167 A JP S52127167A
- Authority
- JP
- Japan
- Prior art keywords
- etching method
- etching
- halogenide
- halogen
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To increase speed of etching and to provide selectivity by using halogen, halogenide or other compound with these for sealing gas into the ion beam etching unit.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4364576A JPS52127167A (en) | 1976-04-19 | 1976-04-19 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4364576A JPS52127167A (en) | 1976-04-19 | 1976-04-19 | Etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52127167A true JPS52127167A (en) | 1977-10-25 |
Family
ID=12669592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4364576A Pending JPS52127167A (en) | 1976-04-19 | 1976-04-19 | Etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52127167A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54102872A (en) * | 1978-01-30 | 1979-08-13 | Toshiba Corp | Ion etching method |
JPS58225637A (en) * | 1982-06-23 | 1983-12-27 | Sony Corp | Ion beam apparatus |
-
1976
- 1976-04-19 JP JP4364576A patent/JPS52127167A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54102872A (en) * | 1978-01-30 | 1979-08-13 | Toshiba Corp | Ion etching method |
JPS6228574B2 (en) * | 1978-01-30 | 1987-06-22 | Tokyo Shibaura Electric Co | |
JPS58225637A (en) * | 1982-06-23 | 1983-12-27 | Sony Corp | Ion beam apparatus |
JPH0481325B2 (en) * | 1982-06-23 | 1992-12-22 | Sony Corp |
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