JPS52127762A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS52127762A JPS52127762A JP4460776A JP4460776A JPS52127762A JP S52127762 A JPS52127762 A JP S52127762A JP 4460776 A JP4460776 A JP 4460776A JP 4460776 A JP4460776 A JP 4460776A JP S52127762 A JPS52127762 A JP S52127762A
- Authority
- JP
- Japan
- Prior art keywords
- etching method
- halogen
- etching
- ion beam
- application
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To form the microscopic pattern by etching the processed object deposited in the gas plasma of halogen and/or halogen compound with selective speed in use of application of ion beam.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4460776A JPS6044825B2 (en) | 1976-04-19 | 1976-04-19 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4460776A JPS6044825B2 (en) | 1976-04-19 | 1976-04-19 | Etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52127762A true JPS52127762A (en) | 1977-10-26 |
JPS6044825B2 JPS6044825B2 (en) | 1985-10-05 |
Family
ID=12696121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4460776A Expired JPS6044825B2 (en) | 1976-04-19 | 1976-04-19 | Etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6044825B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5554939U (en) * | 1978-10-09 | 1980-04-14 | ||
JPS59165422A (en) * | 1983-03-10 | 1984-09-18 | Agency Of Ind Science & Technol | Dry process apparatus |
JPS61136229A (en) * | 1984-12-06 | 1986-06-24 | Toshiba Corp | Dry etching device |
JPH07193044A (en) * | 1992-12-16 | 1995-07-28 | Science & Tech Agency | Pattern etching method for sic |
US7887665B2 (en) | 2002-10-28 | 2011-02-15 | Tokyo Seimitsu Co., Ltd. | Expanding method and expanding device |
US7886798B2 (en) | 2002-10-28 | 2011-02-15 | Tokyo Seimitsu Co., Ltd. | Expanding method and expanding device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0320280U (en) * | 1989-07-08 | 1991-02-27 |
-
1976
- 1976-04-19 JP JP4460776A patent/JPS6044825B2/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5554939U (en) * | 1978-10-09 | 1980-04-14 | ||
JPS59165422A (en) * | 1983-03-10 | 1984-09-18 | Agency Of Ind Science & Technol | Dry process apparatus |
JPS61136229A (en) * | 1984-12-06 | 1986-06-24 | Toshiba Corp | Dry etching device |
JPH07193044A (en) * | 1992-12-16 | 1995-07-28 | Science & Tech Agency | Pattern etching method for sic |
US7887665B2 (en) | 2002-10-28 | 2011-02-15 | Tokyo Seimitsu Co., Ltd. | Expanding method and expanding device |
US7886798B2 (en) | 2002-10-28 | 2011-02-15 | Tokyo Seimitsu Co., Ltd. | Expanding method and expanding device |
Also Published As
Publication number | Publication date |
---|---|
JPS6044825B2 (en) | 1985-10-05 |
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