JPS5311581A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS5311581A JPS5311581A JP8618876A JP8618876A JPS5311581A JP S5311581 A JPS5311581 A JP S5311581A JP 8618876 A JP8618876 A JP 8618876A JP 8618876 A JP8618876 A JP 8618876A JP S5311581 A JPS5311581 A JP S5311581A
- Authority
- JP
- Japan
- Prior art keywords
- etching method
- resist
- inhibit
- degradation
- mixed gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To increase etching rate and inhibit the degradation of resist by performing plasma etching an a mixed gas atmosphere of fluorine compound and halogen alone.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8618876A JPS5311581A (en) | 1976-07-19 | 1976-07-19 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8618876A JPS5311581A (en) | 1976-07-19 | 1976-07-19 | Etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5311581A true JPS5311581A (en) | 1978-02-02 |
Family
ID=13879782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8618876A Pending JPS5311581A (en) | 1976-07-19 | 1976-07-19 | Etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5311581A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56100422A (en) * | 1980-01-17 | 1981-08-12 | Toshiba Corp | Plasma etching method |
-
1976
- 1976-07-19 JP JP8618876A patent/JPS5311581A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56100422A (en) * | 1980-01-17 | 1981-08-12 | Toshiba Corp | Plasma etching method |
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