JPS5397775A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS5397775A JPS5397775A JP1264077A JP1264077A JPS5397775A JP S5397775 A JPS5397775 A JP S5397775A JP 1264077 A JP1264077 A JP 1264077A JP 1264077 A JP1264077 A JP 1264077A JP S5397775 A JPS5397775 A JP S5397775A
- Authority
- JP
- Japan
- Prior art keywords
- etching method
- etching
- plave
- formtion
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To eliminate remaining of SiO2 film in undesired portions by repeating resist mask formtion and etching in the same plave.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1264077A JPS5397775A (en) | 1977-02-08 | 1977-02-08 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1264077A JPS5397775A (en) | 1977-02-08 | 1977-02-08 | Etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5397775A true JPS5397775A (en) | 1978-08-26 |
Family
ID=11810957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1264077A Pending JPS5397775A (en) | 1977-02-08 | 1977-02-08 | Etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5397775A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6194312B1 (en) | 1997-07-10 | 2001-02-27 | Nec Corporation | Semiconductor device and method of manufacturing the same |
-
1977
- 1977-02-08 JP JP1264077A patent/JPS5397775A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6194312B1 (en) | 1997-07-10 | 2001-02-27 | Nec Corporation | Semiconductor device and method of manufacturing the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5351970A (en) | Manufacture for semiconductor substrate | |
JPS51111072A (en) | Photo etching method | |
JPS5434777A (en) | Mask aligner | |
JPS5394770A (en) | Photo mask | |
JPS5397775A (en) | Etching method | |
JPS5230170A (en) | Method of photoetching | |
JPS51136289A (en) | Semi-conductor producing | |
JPS5389673A (en) | Fine pattern forming method of semiconductor device | |
JPS53116077A (en) | Etching method | |
JPS5362474A (en) | Cleaning method of metal photo mask | |
JPS51151073A (en) | Method to adjust the position of an mask for an integrated circuit | |
JPS52113164A (en) | Removal of organic agent | |
JPS53105982A (en) | Micropattern formation method | |
JPS5318540A (en) | Alpha-chloroacetamides and their use | |
JPS52143769A (en) | Removing method of positive type photo resist | |
JPS5397374A (en) | Mask producing method | |
JPS5419367A (en) | Production of semiconductor device | |
JPS52127768A (en) | Spatter etching method | |
JPS5315765A (en) | Vacuum caontact prevention method of hard mask | |
JPS5397373A (en) | Etching method | |
JPS5287986A (en) | Etching method | |
JPS5386580A (en) | Treating method of semiconductor complex | |
JPS52113907A (en) | 1,1,1,3-tetrahalogeno-4-methyl-4-hydroxypentane and its preparation | |
JPS5371063A (en) | Preparation of 4-(1-9x9-2-isoindolinyl)acetophenone | |
JPS5327368A (en) | Selective etching method |