JPS5217765A - Method to diffuse arsenic in a silicone wafer - Google Patents

Method to diffuse arsenic in a silicone wafer

Info

Publication number
JPS5217765A
JPS5217765A JP50094073A JP9407375A JPS5217765A JP S5217765 A JPS5217765 A JP S5217765A JP 50094073 A JP50094073 A JP 50094073A JP 9407375 A JP9407375 A JP 9407375A JP S5217765 A JPS5217765 A JP S5217765A
Authority
JP
Japan
Prior art keywords
silicone wafer
diffuse arsenic
silicone
arsenic
diffuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50094073A
Other languages
Japanese (ja)
Other versions
JPS5344789B2 (en
Inventor
Saburo Ishiguro
Ichiro Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FURUKAWA KOUGIYOU K K
Furukawa Mining Co Ltd
Furukawa Kogyo Co Ltd
Original Assignee
FURUKAWA KOUGIYOU K K
Furukawa Mining Co Ltd
Furukawa Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FURUKAWA KOUGIYOU K K, Furukawa Mining Co Ltd, Furukawa Kogyo Co Ltd filed Critical FURUKAWA KOUGIYOU K K
Priority to JP50094073A priority Critical patent/JPS5217765A/en
Priority to DE19762634427 priority patent/DE2634427B2/en
Publication of JPS5217765A publication Critical patent/JPS5217765A/en
Publication of JPS5344789B2 publication Critical patent/JPS5344789B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To exactly control the diffusion in a silicone wafer by using silicone arsenic crystal which is chemically stable.
COPYRIGHT: (C)1977,JPO&Japio
JP50094073A 1975-07-31 1975-07-31 Method to diffuse arsenic in a silicone wafer Granted JPS5217765A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP50094073A JPS5217765A (en) 1975-07-31 1975-07-31 Method to diffuse arsenic in a silicone wafer
DE19762634427 DE2634427B2 (en) 1975-07-31 1976-07-30 ARSENIC DIFFUSION INTO SILICON PLATES

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50094073A JPS5217765A (en) 1975-07-31 1975-07-31 Method to diffuse arsenic in a silicone wafer

Publications (2)

Publication Number Publication Date
JPS5217765A true JPS5217765A (en) 1977-02-09
JPS5344789B2 JPS5344789B2 (en) 1978-12-01

Family

ID=14100318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50094073A Granted JPS5217765A (en) 1975-07-31 1975-07-31 Method to diffuse arsenic in a silicone wafer

Country Status (2)

Country Link
JP (1) JPS5217765A (en)
DE (1) DE2634427B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62119109U (en) * 1986-01-17 1987-07-29

Also Published As

Publication number Publication date
JPS5344789B2 (en) 1978-12-01
DE2634427B2 (en) 1978-01-05
DE2634427A1 (en) 1977-02-17

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