JPS5217767A - Method for arsenic diffusion using porous material - Google Patents

Method for arsenic diffusion using porous material

Info

Publication number
JPS5217767A
JPS5217767A JP9407575A JP9407575A JPS5217767A JP S5217767 A JPS5217767 A JP S5217767A JP 9407575 A JP9407575 A JP 9407575A JP 9407575 A JP9407575 A JP 9407575A JP S5217767 A JPS5217767 A JP S5217767A
Authority
JP
Japan
Prior art keywords
porous material
arsenic diffusion
arsenic
diffusion
silicone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9407575A
Other languages
Japanese (ja)
Other versions
JPS5344791B2 (en
Inventor
Ichiro Sudo
Tadayuki Matsukuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FURUKAWA KOUGIYOU K K
Furukawa Mining Co Ltd
Furukawa Kogyo Co Ltd
Original Assignee
FURUKAWA KOUGIYOU K K
Furukawa Mining Co Ltd
Furukawa Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FURUKAWA KOUGIYOU K K, Furukawa Mining Co Ltd, Furukawa Kogyo Co Ltd filed Critical FURUKAWA KOUGIYOU K K
Priority to JP9407575A priority Critical patent/JPS5217767A/en
Publication of JPS5217767A publication Critical patent/JPS5217767A/en
Publication of JPS5344791B2 publication Critical patent/JPS5344791B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To diffuse arsenic over the surface of a silicone wafer without any spoiling by using porous silicone arsenic.
COPYRIGHT: (C)1977,JPO&Japio
JP9407575A 1975-07-31 1975-07-31 Method for arsenic diffusion using porous material Granted JPS5217767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9407575A JPS5217767A (en) 1975-07-31 1975-07-31 Method for arsenic diffusion using porous material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9407575A JPS5217767A (en) 1975-07-31 1975-07-31 Method for arsenic diffusion using porous material

Publications (2)

Publication Number Publication Date
JPS5217767A true JPS5217767A (en) 1977-02-09
JPS5344791B2 JPS5344791B2 (en) 1978-12-01

Family

ID=14100367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9407575A Granted JPS5217767A (en) 1975-07-31 1975-07-31 Method for arsenic diffusion using porous material

Country Status (1)

Country Link
JP (1) JPS5217767A (en)

Also Published As

Publication number Publication date
JPS5344791B2 (en) 1978-12-01

Similar Documents

Publication Publication Date Title
JPS5217767A (en) Method for arsenic diffusion using porous material
JPS5441665A (en) Manufacture for semiconductor device
JPS524167A (en) Manufacturing process of p-n junction type solid element
JPS51123074A (en) Production process of fet
JPS5274280A (en) Semiconductor device and its production
JPS5217765A (en) Method to diffuse arsenic in a silicone wafer
JPS51125356A (en) Process for preparing 4-hydroxycyclopent -2-ene-1-one
JPS5211860A (en) Liquid phase epitaxial device
JPS5419367A (en) Production of semiconductor device
JPS5267271A (en) Formation of through-hole onto semiconductor substrate
JPS51140561A (en) Liquid phase epitaxial growing method
JPS51151071A (en) Manufacturing method of a semiconductor apparatus
JPS5225567A (en) Semiconductor manufacturing apparatus
JPS51138875A (en) Intermittent elmination
JPS51117184A (en) A method of manufacturing membrane of homogeneous pore size
JPS5378780A (en) Preparation for semiconductor device
JPS51117573A (en) Manufacturing method of semiconductor
JPS51131964A (en) Filter device
JPS5317278A (en) Ion implantation apparatus for semiconductor single crystal wafers
JPS51147244A (en) Adjustment system of coder
JPS5418670A (en) Manufacture of semiconductor device
JPS51143589A (en) A process and the apparatus for poly- olefine form
JPS5218881A (en) Method for preparing aspartase with high activity
JPS51130167A (en) Semiconductor device manufacturing method
JPS5219967A (en) Semiconductor manufacturing process