JPS5378780A - Preparation for semiconductor device - Google Patents
Preparation for semiconductor deviceInfo
- Publication number
- JPS5378780A JPS5378780A JP15427176A JP15427176A JPS5378780A JP S5378780 A JPS5378780 A JP S5378780A JP 15427176 A JP15427176 A JP 15427176A JP 15427176 A JP15427176 A JP 15427176A JP S5378780 A JPS5378780 A JP S5378780A
- Authority
- JP
- Japan
- Prior art keywords
- preparation
- semiconductor device
- good
- base layer
- high density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To simultaneously form the base layer including high density zone by the ion impregnation method whose controllability is good, in case of shallow impurity diffusion.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15427176A JPS5378780A (en) | 1976-12-23 | 1976-12-23 | Preparation for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15427176A JPS5378780A (en) | 1976-12-23 | 1976-12-23 | Preparation for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5378780A true JPS5378780A (en) | 1978-07-12 |
Family
ID=15580508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15427176A Pending JPS5378780A (en) | 1976-12-23 | 1976-12-23 | Preparation for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5378780A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59155961A (en) * | 1983-02-25 | 1984-09-05 | Rohm Co Ltd | Manufacture of semiconductor device |
JPH05275439A (en) * | 1992-01-31 | 1993-10-22 | Internatl Business Mach Corp <Ibm> | Bipolar transistor having low external base resistance and noise |
-
1976
- 1976-12-23 JP JP15427176A patent/JPS5378780A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59155961A (en) * | 1983-02-25 | 1984-09-05 | Rohm Co Ltd | Manufacture of semiconductor device |
JPH05275439A (en) * | 1992-01-31 | 1993-10-22 | Internatl Business Mach Corp <Ibm> | Bipolar transistor having low external base resistance and noise |
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