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Fujitsu Ltd
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Fujitsu Ltd
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Application filed by Fujitsu LtdfiledCriticalFujitsu Ltd
Priority to JP15991976ApriorityCriticalpatent/JPS5382163A/en
Publication of JPS5382163ApublicationCriticalpatent/JPS5382163A/en
PURPOSE: To perform vapor phase growing with the condition that the substrate is not affected with instability at the initial period of Ga and As Cl3 gas reaction.