JPS53134360A - Vapor phase growing method for compound semiconductor - Google Patents

Vapor phase growing method for compound semiconductor

Info

Publication number
JPS53134360A
JPS53134360A JP4852377A JP4852377A JPS53134360A JP S53134360 A JPS53134360 A JP S53134360A JP 4852377 A JP4852377 A JP 4852377A JP 4852377 A JP4852377 A JP 4852377A JP S53134360 A JPS53134360 A JP S53134360A
Authority
JP
Japan
Prior art keywords
vapor phase
growing method
compound semiconductor
phase growing
grarium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4852377A
Other languages
Japanese (ja)
Inventor
Junji Komeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4852377A priority Critical patent/JPS53134360A/en
Publication of JPS53134360A publication Critical patent/JPS53134360A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the dispersion in mass-products, by changing the temperature gradient of the part where the substrate crystal is placed, in grarium arsenic vapor phase epitaxial growing method.
COPYRIGHT: (C)1978,JPO&Japio
JP4852377A 1977-04-28 1977-04-28 Vapor phase growing method for compound semiconductor Pending JPS53134360A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4852377A JPS53134360A (en) 1977-04-28 1977-04-28 Vapor phase growing method for compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4852377A JPS53134360A (en) 1977-04-28 1977-04-28 Vapor phase growing method for compound semiconductor

Publications (1)

Publication Number Publication Date
JPS53134360A true JPS53134360A (en) 1978-11-22

Family

ID=12805711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4852377A Pending JPS53134360A (en) 1977-04-28 1977-04-28 Vapor phase growing method for compound semiconductor

Country Status (1)

Country Link
JP (1) JPS53134360A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS497991A (en) * 1972-05-13 1974-01-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS497991A (en) * 1972-05-13 1974-01-24

Similar Documents

Publication Publication Date Title
JPS51111476A (en) Method of liquid phase epitaxial crystal growth
JPS53108389A (en) Manufacture for semiconductor device
JPS53134360A (en) Vapor phase growing method for compound semiconductor
JPS547861A (en) Liquid phase epitaxial growth method
JPS53139970A (en) Liquid phase epitaxial growth method of gaas crystal
JPS51114383A (en) Liquid phase epitaxial crystal growth
JPS5326663A (en) Manu facture of semiconductor device
JPS5429560A (en) Gas phase growth method for semiconductor
JPS5412587A (en) Warpage reducing method of lithium tantalate single crystal wafers
JPS542660A (en) Liquid-phase epitaxial growth method of compound semiconductor
JPS52154347A (en) Low temperature single crystal thin film growth method
JPS528769A (en) Semiconductor device
JPS54134554A (en) Wafer for semiconductor device
JPS5328374A (en) Wafer production
JPS52109866A (en) Liquid epitaxial growing method
JPS51111057A (en) Crystal growing device
JPS52103952A (en) Liquid phase epitaxial crowth method of semiconductor crystal
JPS53128979A (en) Growing method for semiconductor crystal
JPS5210072A (en) Method for growing epitaxial crystal
JPS52114268A (en) Selective liquid growing method
JPS533063A (en) Liquid phase epitaxial growth
JPS5387985A (en) Gaseous phase epitaxial growth method for compound semiconductor crystal
JPS5382163A (en) Semiconductor vapor phase growth method
JPS5394871A (en) Vapor growth method for gaas substrate
JPS53115178A (en) Production of semiconductor device