JPS547861A - Liquid phase epitaxial growth method - Google Patents

Liquid phase epitaxial growth method

Info

Publication number
JPS547861A
JPS547861A JP7289077A JP7289077A JPS547861A JP S547861 A JPS547861 A JP S547861A JP 7289077 A JP7289077 A JP 7289077A JP 7289077 A JP7289077 A JP 7289077A JP S547861 A JPS547861 A JP S547861A
Authority
JP
Japan
Prior art keywords
liquid phase
phase epitaxial
epitaxial growth
crystal
growth method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7289077A
Other languages
Japanese (ja)
Other versions
JPS5931972B2 (en
Inventor
Shoji Igarashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP52072890A priority Critical patent/JPS5931972B2/en
Publication of JPS547861A publication Critical patent/JPS547861A/en
Publication of JPS5931972B2 publication Critical patent/JPS5931972B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain uniform wafers, by placing the dummy crystal substrate having the same kind of composition as the substrate crystal at the circumference of the substrate crystal adjacently and through coincidently arranging the height, and by contacting the crystal growing solution on the upper surface of the both substrates and by performing liquid phase epitaxial growing.
COPYRIGHT: (C)1979,JPO&Japio
JP52072890A 1977-06-21 1977-06-21 Liquid phase epitaxial growth method Expired JPS5931972B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52072890A JPS5931972B2 (en) 1977-06-21 1977-06-21 Liquid phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52072890A JPS5931972B2 (en) 1977-06-21 1977-06-21 Liquid phase epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS547861A true JPS547861A (en) 1979-01-20
JPS5931972B2 JPS5931972B2 (en) 1984-08-06

Family

ID=13502382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52072890A Expired JPS5931972B2 (en) 1977-06-21 1977-06-21 Liquid phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS5931972B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706604A (en) * 1986-06-09 1987-11-17 Honeywell Inc. Wipe-off apparatus of liquid phase epitaxy of mercury cadmium telluride
JPS6364028U (en) * 1986-10-14 1988-04-27
US5017397A (en) * 1990-04-25 1991-05-21 Uy Nguyen Process for extracting antioxidants from Labiatae herbs

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706604A (en) * 1986-06-09 1987-11-17 Honeywell Inc. Wipe-off apparatus of liquid phase epitaxy of mercury cadmium telluride
JPS6364028U (en) * 1986-10-14 1988-04-27
US5017397A (en) * 1990-04-25 1991-05-21 Uy Nguyen Process for extracting antioxidants from Labiatae herbs

Also Published As

Publication number Publication date
JPS5931972B2 (en) 1984-08-06

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