JPS547861A - Liquid phase epitaxial growth method - Google Patents
Liquid phase epitaxial growth methodInfo
- Publication number
- JPS547861A JPS547861A JP7289077A JP7289077A JPS547861A JP S547861 A JPS547861 A JP S547861A JP 7289077 A JP7289077 A JP 7289077A JP 7289077 A JP7289077 A JP 7289077A JP S547861 A JPS547861 A JP S547861A
- Authority
- JP
- Japan
- Prior art keywords
- liquid phase
- phase epitaxial
- epitaxial growth
- crystal
- growth method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain uniform wafers, by placing the dummy crystal substrate having the same kind of composition as the substrate crystal at the circumference of the substrate crystal adjacently and through coincidently arranging the height, and by contacting the crystal growing solution on the upper surface of the both substrates and by performing liquid phase epitaxial growing.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52072890A JPS5931972B2 (en) | 1977-06-21 | 1977-06-21 | Liquid phase epitaxial growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52072890A JPS5931972B2 (en) | 1977-06-21 | 1977-06-21 | Liquid phase epitaxial growth method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS547861A true JPS547861A (en) | 1979-01-20 |
JPS5931972B2 JPS5931972B2 (en) | 1984-08-06 |
Family
ID=13502382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52072890A Expired JPS5931972B2 (en) | 1977-06-21 | 1977-06-21 | Liquid phase epitaxial growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5931972B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4706604A (en) * | 1986-06-09 | 1987-11-17 | Honeywell Inc. | Wipe-off apparatus of liquid phase epitaxy of mercury cadmium telluride |
JPS6364028U (en) * | 1986-10-14 | 1988-04-27 | ||
US5017397A (en) * | 1990-04-25 | 1991-05-21 | Uy Nguyen | Process for extracting antioxidants from Labiatae herbs |
-
1977
- 1977-06-21 JP JP52072890A patent/JPS5931972B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4706604A (en) * | 1986-06-09 | 1987-11-17 | Honeywell Inc. | Wipe-off apparatus of liquid phase epitaxy of mercury cadmium telluride |
JPS6364028U (en) * | 1986-10-14 | 1988-04-27 | ||
US5017397A (en) * | 1990-04-25 | 1991-05-21 | Uy Nguyen | Process for extracting antioxidants from Labiatae herbs |
Also Published As
Publication number | Publication date |
---|---|
JPS5931972B2 (en) | 1984-08-06 |
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