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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Application filed by Mitsubishi Electric CorpfiledCriticalMitsubishi Electric Corp
Priority to JP1004177ApriorityCriticalpatent/JPS5394871A/en
Publication of JPS5394871ApublicationCriticalpatent/JPS5394871A/en
PURPOSE: To obtain an active layer of the crystal featuring a dudden impurity concentration distrubution near the interface, by applying an extremely simple vapor growing method.
COPYRIGHT: (C)1978,JPO&Japio
JP1004177A1977-01-311977-01-31Vapor growth method for gaas substrate
PendingJPS5394871A
(en)