JPS53105371A - Crystal growing method for potassium arsenide - Google Patents
Crystal growing method for potassium arsenideInfo
- Publication number
- JPS53105371A JPS53105371A JP1932877A JP1932877A JPS53105371A JP S53105371 A JPS53105371 A JP S53105371A JP 1932877 A JP1932877 A JP 1932877A JP 1932877 A JP1932877 A JP 1932877A JP S53105371 A JPS53105371 A JP S53105371A
- Authority
- JP
- Japan
- Prior art keywords
- crystal growing
- growing method
- potassium arsenide
- arsenide
- potassium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title 1
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 title 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To grow the GaAs having high specific resistivity, by only alterating the position of substrate and stopping the supply of dopant gas under the normal conditions of operation layer growing.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52019328A JPS6048900B2 (en) | 1977-02-25 | 1977-02-25 | Gallium arsenide crystal growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52019328A JPS6048900B2 (en) | 1977-02-25 | 1977-02-25 | Gallium arsenide crystal growth method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53105371A true JPS53105371A (en) | 1978-09-13 |
JPS6048900B2 JPS6048900B2 (en) | 1985-10-30 |
Family
ID=11996331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52019328A Expired JPS6048900B2 (en) | 1977-02-25 | 1977-02-25 | Gallium arsenide crystal growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6048900B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5591819A (en) * | 1978-12-28 | 1980-07-11 | Fujitsu Ltd | Vapor phase growth method |
JPS6115322A (en) * | 1984-06-29 | 1986-01-23 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Homogeneous chemical depositing method and device therefor |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0520188Y2 (en) * | 1987-04-27 | 1993-05-26 | ||
JPH0525477Y2 (en) * | 1987-09-14 | 1993-06-28 |
-
1977
- 1977-02-25 JP JP52019328A patent/JPS6048900B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5591819A (en) * | 1978-12-28 | 1980-07-11 | Fujitsu Ltd | Vapor phase growth method |
JPS6246975B2 (en) * | 1978-12-28 | 1987-10-06 | Fujitsu Ltd | |
JPS6115322A (en) * | 1984-06-29 | 1986-01-23 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Homogeneous chemical depositing method and device therefor |
Also Published As
Publication number | Publication date |
---|---|
JPS6048900B2 (en) | 1985-10-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS53105371A (en) | Crystal growing method for potassium arsenide | |
JPS53108389A (en) | Manufacture for semiconductor device | |
JPS5429560A (en) | Gas phase growth method for semiconductor | |
JPS52104474A (en) | Control method for crystal growth | |
JPS5351964A (en) | Selective growth method for semiconductor crystal | |
JPS52106673A (en) | Crystal growing method and device thereof | |
JPS53104161A (en) | Crystal growth method | |
JPS5211860A (en) | Liquid phase epitaxial device | |
JPS52135264A (en) | Liquid phase epitaxial growth method | |
JPS547861A (en) | Liquid phase epitaxial growth method | |
JPS5358978A (en) | Growing method for crystal | |
JPS52155189A (en) | Multiple layer crystal growth | |
JPS51114383A (en) | Liquid phase epitaxial crystal growth | |
JPS5328374A (en) | Wafer production | |
JPS5437570A (en) | Liquid-crystal epitaxial growth method | |
JPS52114268A (en) | Selective liquid growing method | |
JPS5231665A (en) | Growing method of semiconductor crystal | |
JPS5210072A (en) | Method for growing epitaxial crystal | |
JPS53108766A (en) | Vapor phase growth method of sos film | |
JPS5232669A (en) | Liquid-phase epitaxial growth method | |
JPS5261958A (en) | Method and device for liquid phase crystal crowth | |
JPS5436192A (en) | Manufacture for semiconductor | |
JPS5394871A (en) | Vapor growth method for gaas substrate | |
JPS5380965A (en) | Liquid-phase growth method | |
JPS5416177A (en) | Crystal growth method |