JPS53105371A - Crystal growing method for potassium arsenide - Google Patents

Crystal growing method for potassium arsenide

Info

Publication number
JPS53105371A
JPS53105371A JP1932877A JP1932877A JPS53105371A JP S53105371 A JPS53105371 A JP S53105371A JP 1932877 A JP1932877 A JP 1932877A JP 1932877 A JP1932877 A JP 1932877A JP S53105371 A JPS53105371 A JP S53105371A
Authority
JP
Japan
Prior art keywords
crystal growing
growing method
potassium arsenide
arsenide
potassium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1932877A
Other languages
Japanese (ja)
Other versions
JPS6048900B2 (en
Inventor
Yasushi Kawakami
Masahiro Akiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP52019328A priority Critical patent/JPS6048900B2/en
Publication of JPS53105371A publication Critical patent/JPS53105371A/en
Publication of JPS6048900B2 publication Critical patent/JPS6048900B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To grow the GaAs having high specific resistivity, by only alterating the position of substrate and stopping the supply of dopant gas under the normal conditions of operation layer growing.
COPYRIGHT: (C)1978,JPO&Japio
JP52019328A 1977-02-25 1977-02-25 Gallium arsenide crystal growth method Expired JPS6048900B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52019328A JPS6048900B2 (en) 1977-02-25 1977-02-25 Gallium arsenide crystal growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52019328A JPS6048900B2 (en) 1977-02-25 1977-02-25 Gallium arsenide crystal growth method

Publications (2)

Publication Number Publication Date
JPS53105371A true JPS53105371A (en) 1978-09-13
JPS6048900B2 JPS6048900B2 (en) 1985-10-30

Family

ID=11996331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52019328A Expired JPS6048900B2 (en) 1977-02-25 1977-02-25 Gallium arsenide crystal growth method

Country Status (1)

Country Link
JP (1) JPS6048900B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591819A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Vapor phase growth method
JPS6115322A (en) * 1984-06-29 1986-01-23 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Homogeneous chemical depositing method and device therefor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0520188Y2 (en) * 1987-04-27 1993-05-26
JPH0525477Y2 (en) * 1987-09-14 1993-06-28

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591819A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Vapor phase growth method
JPS6246975B2 (en) * 1978-12-28 1987-10-06 Fujitsu Ltd
JPS6115322A (en) * 1984-06-29 1986-01-23 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Homogeneous chemical depositing method and device therefor

Also Published As

Publication number Publication date
JPS6048900B2 (en) 1985-10-30

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