JPS5429560A - Gas phase growth method for semiconductor - Google Patents
Gas phase growth method for semiconductorInfo
- Publication number
- JPS5429560A JPS5429560A JP9503077A JP9503077A JPS5429560A JP S5429560 A JPS5429560 A JP S5429560A JP 9503077 A JP9503077 A JP 9503077A JP 9503077 A JP9503077 A JP 9503077A JP S5429560 A JPS5429560 A JP S5429560A
- Authority
- JP
- Japan
- Prior art keywords
- gas phase
- semiconductor
- growth method
- phase growth
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To block automatic doping and to obtain a steep impurity concentration curve, by heating the substrate under the atomosphere of normal or low pressure not including oxygen in the substrate and growing the substrate in other gas phase growing unit after transferring it, when growing epitaxial layer on the semiconductor layer.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9503077A JPS5429560A (en) | 1977-08-10 | 1977-08-10 | Gas phase growth method for semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9503077A JPS5429560A (en) | 1977-08-10 | 1977-08-10 | Gas phase growth method for semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5429560A true JPS5429560A (en) | 1979-03-05 |
Family
ID=14126684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9503077A Pending JPS5429560A (en) | 1977-08-10 | 1977-08-10 | Gas phase growth method for semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5429560A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0196923A (en) * | 1987-10-09 | 1989-04-14 | Sony Corp | Epitaxial growth method |
JPH0620896A (en) * | 1992-06-29 | 1994-01-28 | Kyushu Electron Metal Co Ltd | Manufacture of semiconductor wafer |
JP2009252920A (en) * | 2008-04-04 | 2009-10-29 | Sumco Corp | Epitaxial silicon wafer, and method of manufacturing the same |
-
1977
- 1977-08-10 JP JP9503077A patent/JPS5429560A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0196923A (en) * | 1987-10-09 | 1989-04-14 | Sony Corp | Epitaxial growth method |
JPH0620896A (en) * | 1992-06-29 | 1994-01-28 | Kyushu Electron Metal Co Ltd | Manufacture of semiconductor wafer |
JP2560178B2 (en) * | 1992-06-29 | 1996-12-04 | 九州電子金属株式会社 | Method for manufacturing semiconductor wafer |
JP2009252920A (en) * | 2008-04-04 | 2009-10-29 | Sumco Corp | Epitaxial silicon wafer, and method of manufacturing the same |
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