JPS5429560A - Gas phase growth method for semiconductor - Google Patents

Gas phase growth method for semiconductor

Info

Publication number
JPS5429560A
JPS5429560A JP9503077A JP9503077A JPS5429560A JP S5429560 A JPS5429560 A JP S5429560A JP 9503077 A JP9503077 A JP 9503077A JP 9503077 A JP9503077 A JP 9503077A JP S5429560 A JPS5429560 A JP S5429560A
Authority
JP
Japan
Prior art keywords
gas phase
semiconductor
growth method
phase growth
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9503077A
Other languages
Japanese (ja)
Inventor
Sadao Yasuda
Tsukasa Masuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9503077A priority Critical patent/JPS5429560A/en
Publication of JPS5429560A publication Critical patent/JPS5429560A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To block automatic doping and to obtain a steep impurity concentration curve, by heating the substrate under the atomosphere of normal or low pressure not including oxygen in the substrate and growing the substrate in other gas phase growing unit after transferring it, when growing epitaxial layer on the semiconductor layer.
COPYRIGHT: (C)1979,JPO&Japio
JP9503077A 1977-08-10 1977-08-10 Gas phase growth method for semiconductor Pending JPS5429560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9503077A JPS5429560A (en) 1977-08-10 1977-08-10 Gas phase growth method for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9503077A JPS5429560A (en) 1977-08-10 1977-08-10 Gas phase growth method for semiconductor

Publications (1)

Publication Number Publication Date
JPS5429560A true JPS5429560A (en) 1979-03-05

Family

ID=14126684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9503077A Pending JPS5429560A (en) 1977-08-10 1977-08-10 Gas phase growth method for semiconductor

Country Status (1)

Country Link
JP (1) JPS5429560A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0196923A (en) * 1987-10-09 1989-04-14 Sony Corp Epitaxial growth method
JPH0620896A (en) * 1992-06-29 1994-01-28 Kyushu Electron Metal Co Ltd Manufacture of semiconductor wafer
JP2009252920A (en) * 2008-04-04 2009-10-29 Sumco Corp Epitaxial silicon wafer, and method of manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0196923A (en) * 1987-10-09 1989-04-14 Sony Corp Epitaxial growth method
JPH0620896A (en) * 1992-06-29 1994-01-28 Kyushu Electron Metal Co Ltd Manufacture of semiconductor wafer
JP2560178B2 (en) * 1992-06-29 1996-12-04 九州電子金属株式会社 Method for manufacturing semiconductor wafer
JP2009252920A (en) * 2008-04-04 2009-10-29 Sumco Corp Epitaxial silicon wafer, and method of manufacturing the same

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