JPS5288276A - Liquid-phase epitaxial growth - Google Patents

Liquid-phase epitaxial growth

Info

Publication number
JPS5288276A
JPS5288276A JP409176A JP409176A JPS5288276A JP S5288276 A JPS5288276 A JP S5288276A JP 409176 A JP409176 A JP 409176A JP 409176 A JP409176 A JP 409176A JP S5288276 A JPS5288276 A JP S5288276A
Authority
JP
Japan
Prior art keywords
epitaxial growth
liquid
phase epitaxial
phase
constructing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP409176A
Other languages
Japanese (ja)
Other versions
JPS5440234B2 (en
Inventor
Masaaki Sakuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP409176A priority Critical patent/JPS5288276A/en
Publication of JPS5288276A publication Critical patent/JPS5288276A/en
Publication of JPS5440234B2 publication Critical patent/JPS5440234B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: In constructing a multi-layer structure in a semiconductor device, it is intended to provide a method of effecting liquid-phase epitaxial growth which can produce a thin, flat epitaxial layer with good reproducibility.
COPYRIGHT: (C)1977,JPO&Japio
JP409176A 1976-01-19 1976-01-19 Liquid-phase epitaxial growth Granted JPS5288276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP409176A JPS5288276A (en) 1976-01-19 1976-01-19 Liquid-phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP409176A JPS5288276A (en) 1976-01-19 1976-01-19 Liquid-phase epitaxial growth

Publications (2)

Publication Number Publication Date
JPS5288276A true JPS5288276A (en) 1977-07-23
JPS5440234B2 JPS5440234B2 (en) 1979-12-03

Family

ID=11575113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP409176A Granted JPS5288276A (en) 1976-01-19 1976-01-19 Liquid-phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5288276A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558626U (en) * 1978-06-30 1980-01-21
JPS56155527A (en) * 1980-04-30 1981-12-01 Fujitsu Ltd Apparatus for liquid phase epitaxial growth

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4937569A (en) * 1972-08-09 1974-04-08

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4937569A (en) * 1972-08-09 1974-04-08

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS558626U (en) * 1978-06-30 1980-01-21
JPS56155527A (en) * 1980-04-30 1981-12-01 Fujitsu Ltd Apparatus for liquid phase epitaxial growth

Also Published As

Publication number Publication date
JPS5440234B2 (en) 1979-12-03

Similar Documents

Publication Publication Date Title
JPS549592A (en) Luminous semiconductor element
JPS53108389A (en) Manufacture for semiconductor device
JPS5434756A (en) Vapor-phase growth method for semiconductor
JPS5288276A (en) Liquid-phase epitaxial growth
JPS535569A (en) Liquid-phase epitaxial growth method
JPS53104162A (en) Forming method for epitaxial layer on semiconductor wafer
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS52110570A (en) Forming method of silicon epitaxial layer
JPS5384457A (en) Liquid-phase epitaxial growth method
JPS52117062A (en) Liquid phase epitaxial growth process
JPS52155189A (en) Multiple layer crystal growth
JPS52117900A (en) Growing method for single crystal thin film of bismuth oxide compounds
JPS5368165A (en) Production of semiconductor device
JPS5211860A (en) Liquid phase epitaxial device
JPS5391572A (en) Liquid-phase growth method for semiconductor crystal
JPS5231665A (en) Growing method of semiconductor crystal
JPS5366163A (en) Selective growth method of semiconductor buried layer
JPS5371583A (en) Semiconductor device
JPS52114268A (en) Selective liquid growing method
JPS5322382A (en) Production of dielectric isolating substrate
JPS5289599A (en) Liquid phase eptaxial growth
JPS52135264A (en) Liquid phase epitaxial growth method
JPS5329668A (en) Production of semiconductor device
JPS545654A (en) Epitaxial wafer for production of compound semiconductor device and manufacture of the same
JPS5395570A (en) Forming method of epitaxial layer